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MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…

Materials Science · Physics 2016-11-15 Chih-Shan Tan , Yu-Jung Lu , Chun-Chi Chen , Pei-Hsuan Liu , Shangjr Gwo , Guang-Yu Guo , Lih-Juann Chen

Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…

Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels. Understanding the contact interface is therefore quite…

Materials Science · Physics 2020-05-01 Bo Han , Chen Yang , Xiaolong Xu , Yuehui Li , Ruochen Shi , Kaihui Liu , Haicheng Wang , Yu Ye , Jing Lu , Dapeng Yu , Peng Gao

Monolithic realization of metallic 1T and semiconducting 2H polymorphic phases makes MoS2 a potential candidate for future microelectronic circuits. Though co-existence of these phases has been reported, a method for engineering a stable 1T…

Mesoscale and Nanoscale Physics · Physics 2018-08-22 Chithra H. Sharma , Ananthu P. Surendran , Abin Varghese , Madhu Thalakulam*

The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices…

Materials Science · Physics 2018-03-29 Thomas Garandel , Rémi Arras , Xavier Marie , Pierre Renucci , Lionel Calmels

The phase-change material antimony sulfide (Sb$_2$S$_3$) relies on rapid and reversible phase transitions between crystalline and amorphous states, which are critical for their performance in data storage and photonics applications. In this…

Materials Science · Physics 2026-05-21 Souvik Chakraborty , Wen-Qing Li , Yun Liu

Transition metal dichalcogenides like MoS2 can exist many phases like the semiconducting 2H and the metallic 1T phases which have shown intriguing properties for energy and electrocatalytic applications. However, the 2H and 1T phases…

Applied Physics · Physics 2019-10-10 Qingqing Ke , Xiao Zhang , Abdelnaby M. Elshahawy , Yating Hu , Qiyuan He , Yongqing Cai , John Wang

The increasing prevalence of pharmaceutical contaminants within the aquatic environment has generated considerable environmental concerns, especially regarding persistent anticancer medications like the kinase inhibitor sorafenib (SRF),…

Materials Science · Physics 2026-03-31 I. Agnes Felicia Roy , Kuo Yuan Hwa , Aravindan Santhan , Slava V Rotkin

High contact resistance remains a central obstacle to the integration of two-dimensional (2D) semiconductors in electronic devices. Recent advances have demonstrated that contact performance can be dramatically improved through interface…

Thicknesses-dependent performances of metal-multilayered semiconductor junctions have attracted increasing attention, but till present, the mechanism of interaction and the resulting charge distribution at interfaces which control the…

Materials Science · Physics 2019-10-30 Qian Wang , Yangfan Shao , Xingqiang Shi

The application of two-dimensional (2D) semiconductors, such as monolayer MoS2, is limited by the high contact resistance commonly attributed to interfacial barriers at metal contacts. Furthermore, the dependence of electrical conductivity…

The photoconversion of CO$_2$ to hydrocarbons is a sustainable route to its transformation into value-added compounds and, thereby, crucial to mitigating the energy and climate crises. CuPt nanoparticles on TiO$_2$ surfaces have been…

This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response…

Ni-doped MoS$_2$ is a layered material with useful tribological, optoelectronic, and catalytic properties. Experiment and theory on doped MoS$_2$ has focused mostly on monolayers or finite particles: theoretical studies of bulk Ni-doped…

Materials Science · Physics 2021-07-01 Enrique Guerrero , Rijan Karkee , David A. Strubbe

The phenomenon of a partial 2H\rightarrow1T phase transition within multiwalled WS2 nanotubes under substitutional Rhenium doping is discovered by means of high-resolution transmission electron microscopy. Using density-functional…

We explore the adsorption of MoS2 on a range of metal substrates by means of first-principles density functional theory calculations. Including van der Waals forces in the density functional is essential to capture the interaction between…

Materials Science · Physics 2016-02-03 M. Farmanbar , G. Brocks

We construct a fast, transferable, general purpose, machine-learning interatomic potential suitable for large-scale simulations of $N_2$. The potential is trained only on high quality quantum chemical molecule-molecule interactions, no…

Computational Physics · Physics 2024-05-10 Marcin Kirsz , Ciprian G. Pruteanu , Peter I. C. Cooke , Graeme J. Ackland

Monolayer MoTe2 exhibits a variety of derivative structural phases and associated novel electronic properties that enable a wealth of potential applications in future electronic and optoelectronic devices. However, a comprehensive study…

Materials Science · Physics 2024-07-22 Zemin Pan , Tao Jian , Hui Zhang , Xiaoyu Lin , Chao Zhu , Jinghao Deng , Zhengbo Cheng , Chuansheng Liu , Chendong Zhang

Kinetic of a reversible structural transition between insulating (2H) and metallic (1T') phases in a monolayer MoTe2 due to an electrostatic doping is studied using first-principle calculations. The driving force for the structural…

Materials Science · Physics 2018-06-20 O. Rubel

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have emerged as promising materials for electronic, optoelectronic, and valleytronic applications. Recent work suggests drastic changes of the band gap and exciton binding…

Mesoscale and Nanoscale Physics · Physics 2017-08-02 Eric Parzinger , Martin Hetzl , Ursula Wurstbauer , Alexander W. Holleitner