Related papers: Harnessing Plasmonic Heating For Switching In Anti…
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially…
The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic MRAM.…
The coexistence and coupling of magnetic and ferroelectric orderings in single phase multiferroics has evinced enormous scientific interest as it involves breaking of time reversal and space inversion symmetries in the same material. The…
Plasmonic nanoheaters are reported that produce a significant local heating when excited by a 532 nm wavelength focussed laser beam. A significant temperature increase derives from the strong confinement of electric field enabled by the…
Pinning magnetization in a ferromagnetic thin film is commonly realized through exchange biasing with an adjacent antiferromagnet. Field-cooling from above the N\'{e}el temperature is a reliable yet slow re-pinning method in exchange-biased…
Multiferroic devices hold profound promise for ultra-low energy computing in beyond Moore's law era. The magnetization of a magnetostrictive shape-anisotropic single-domain nanomagnet strain-coupled with a piezoelectric layer in a…
Plasmonic lattice nanostructures are of technological interest because of their capacity to manipulate light below the diffraction limit. Here, we present a detailed study of dark and bright modes in the visible and near-infrared energy…
Electrical tuning of magnetism is crucial for developing fast, compact, ultra-low power electronic devices. Multiferroics offer significant potential due to their ability to control magnetic via an electric field through magnetoelectric…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
The primary impediment to continued improvement of charge-based electronics is the excessive energy dissipation incurred in switching a bit of information. With suitable choice of materials, devices made of multiferroic composites, i.e.,…
Interfacial exchange coupling between antiferromagnets (AFMs) and ferromagnets (FMs) crucially makes it possible to shift the FM hysteresis, known as exchange bias, and to switch AFM states. Two-dimensional magnets unlock opportunities to…
Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their…
The manipulation of antiferromagnetic (AFM) order is a central theme in modern spintronics. In this work, we achieve reliable switching of the chiral AFM state in the Weyl antiferromagnet Mn$_3$Sn using a heat pulse combined with a very…
Antiferromagnetic materials hold promising prospects in novel types of spintronics applications. Assessing the stability of antiferromagnetic nanostructures against thermal excitations is a crucial aspect of designing devices with a high…
Information can be stored in magnetic materials by encoding with the direction of the magnetic moment of elements. A figure of merit for these systems is the energy needed to change the information rewrite the storage by changing the…
In an antiferromagnet (AF) with uniaxial anisotropy, spin-up and spin-down magnons coexist and form an intrinsic degree of freedom resembling electrons. When polarized by an adjacent ferromagnet (F), a magnonic pure spin current can be…
Nanomagnetic logic, in which the outcome of a computation is embedded into the energy hierarchy of magnetostatically coupled nanomagnets, offers an attractive pathway to implement in-memory computation. This computational paradigm avoids…
To advance the use of thermally-activated magnetic materials in device applications it is necessary to examine their behaviour on the localised scale in operando conditions. Equi-atomic FeRh undergoes a magnetostructural transition from an…
Electric-field induced magnetization switching in multiferroic magnetoelectric devices is promising for beyond Moore's law computing. We show here that interface-coupled multiferroic heterostructures, i.e., a ferroelectric layer coupled…
Plasmonic wireless nanolinks hold great promise to overcome limitations from conventional metallic wires, namely narrow bandwidths, Ohmic losses, dispersion and cross-talking. However, current developments are limited to the wireless…