Related papers: Monolithically Integrated VO$_2$ Mott Oscillators …
With remarkable electrical and optical switching properties induced at low power and near room temperature (68C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research…
VO$_{2}$ is a model material system which exhibits a metal to insulator transition at 67$^\circ$C. This holds potential for future ultrafast switching in memory devices, but typically requires a purely electronic process to avoid the slow…
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible…
The recent surge of interest in brain-inspired computing and power-efficient electronics has dramatically bolstered development of computation and communication using neuron-like spiking signals. Devices that can produce rapid and…
The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von…
$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition…
Oscillating neural networks are promising candidates for a new computational paradigm, where complex optimization problems are solved by physics itself through the synchronization of coupled oscillating circuits. Nanoscale VO$_2$ Mott…
Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient artificial intelligence and learning machines. An important factor in…
Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott…
Volatile threshold resistive switching and neuronal oscillations in phase-change materials, specifically those undergoing metal-to-insulator transitions, offer unique attributes such as fast and low-field volatile switching, tunability, and…
Controlled disorder in correlated materials provides a new route to emergent stochastic dynamics in neuromorphic hardware. Here we show that focused ion beam irradiation in VO$_{2}$- and V$_{2}$O$_{3}$-based resistive-switching oscillators…
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room…
Biological neurons are electro-mechanical systems, where the generation and propagation of an action potential is coupled to generation and transmission of an acoustic wave. Neuristors, such as VO2, characterized by insulator-metal…
Mimicking the collective excitatory and inhibitory behaviors of biological neurons remains a critical challenge in the development of neuromorphic computing systems that rival the complexity and performance of the human brain. Volatile…
Artificial neuronal devices are the basic building blocks for neuromorphic computing systems, which have been motivated by realistic brain emulation. Aiming for these applications, various device concepts have been proposed to mimic the…
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…
A strongly correlated Mott first-order metal-insulator transition (MIT) (or Jump) not accompanied by the structural phase transition (SPT) was clearly revealed in VO_2, (New J. Phys. 6 (1004) 52, Appl. Phys. Lett. 86 (2005) 242101, Physica…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Electrically driven insulator-metal transitions in prototypical quantum materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V: O stoichiometry offers a vast electronic phase space with…
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…