Related papers: Valley-Aware Optimal Control of Spin Shuttling Usi…
We theoretically propose a method to perform in situ measurements of charge noise during logical operations in silicon quantum dot spin qubits. Our method does not require ancillary spectator qubits but makes use of the valley degree of…
Capacitively coupled semiconductor spin qubits hold promise as the building blocks of a scalable quantum computing architecture with long-range coupling between distant qubits. However, the two-qubit gate fidelities achieved in experiments…
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies…
Quantum entanglement, in the form of spin squeezing, is known to improve the sensitivity of atomic sensors to static or slowly varying fields. Sensing transient events presents a distinct challenge, requires different analysis tools, and…
Fluctuations of electric fields can change the position of a gate-defined quantum dot in a semiconductor heterostructure. In the presence of magnetic field gradient, these stochastic shifts of electron's wavefunction lead to fluctuations of…
We consider a single electron in a 1D quantum dot with a static slanting Zeeman field. By combining the spin and orbital degrees of freedom of the electron, an effective quantum two-level (qubit) system is defined. This pseudo-spin can be…
Solid-state qubits have recently advanced to the level that enables them, in-principle, to be scaled-up into fault-tolerant quantum computers. As these physical qubits continue to advance, meeting the challenge of realising a quantum…
Scalable spin-based quantum computing demands precise and stable control of a large number of gate-defined quantum dots while minimizing wiring complexity and thermal load. Control architectures based on sample-and-hold (SH) multiplexing…
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a…
Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent…
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate…
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an…
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally…
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field…
We study the coherent control of spin tunneling for a spin-orbit (SO) coupled boson held in a driven triple well. Under high-frequency approximation, we analytically obtain the quasienergies of the SO-coupled bosonic triple-well system and…
Trapped-ion quantum information processors offer many advantages for achieving high-fidelity operations on a large number of qubits, but current experiments require bulky external equipment for classical and quantum control of many ions. We…
Understanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems is central to applications in spin-based electronics and quantum computation. Recent developments in the…
Si/SiGe quantum wells that incorporate Ge concentration oscillations, known as long-period Wiggle Wells, have previously been shown to enhance the Dresselhaus spin-orbit coupling (SOC) of conduction-band electrons. Such intrinsic SOC is…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
Spin squeezing is a form of entanglement that reshapes the quantum projection noise to improve measurement precision. Here, we provide numerical and analytic evidence for the following conjecture: any Hamiltonian exhibiting finite…