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Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent…

We investigate the effects of alloying and growth orientation on the properties of the ultra-wide bandgap semiconductor \beta-Ga2O3 and pseudomorphic AlGaO alloy heterojunctions. Band offsets are computed from first principles using density…

The local structural distortions in polydomain ferroelectric PbTiO3/SrTiO3 superlattices are investigated by means of high spatial and energy resolution electron energy loss spectroscopy combined with high angle annular dark field imaging.…

Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high…

We introduce a deep-recessed gate architecture in $\beta$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped…

V2O3 is an archetypal system for the study of correlation induced, Mott-Hubbard metal-insulator transitions. Despite decades of extensive investigations, the accurate description of its electronic properties remains an open problem in the…

Motivated by recent scanning tunneling microscopy experiments on surfaces of Bi$_{1-x}$Sb$_{x'}$\cite{yazdanistm,gomesstm} and Bi$_2$Te$_3$,\cite{kaptunikstm,xuestm} we theoretically study the electronic structure of a 3-dimensional (3D)…

Mesoscale and Nanoscale Physics · Physics 2015-05-14 Qiang-Hua Wang , Da Wang , Fu-Chun Zhang

Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity…

We demonstrate a nondestructive, high-throughput method for observing dislocations in GaN (0001) using phase-contrast microscopy (PCM). The PCM images (359x300 $\mu$m$^2$) analyzed in this study were acquired with an exposure time of 3 ms…

Materials Science · Physics 2026-04-27 Yukari Ishiakwa , Ryo Hattori , Yongzhao Yao , Daiki Katsube , Koji Sato

Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (beta-Ga2O3), is a complex process. This paper presents the first study on the process of the defects accumulation in…

The two-carrier transport model as proposed for the two-dimensional electron gas formed at the interfaces of oxide heterostructures is investigated by means of a combined perturbation of near ultra-violet radiation and electrostatic field,…

Strongly Correlated Electrons · Physics 2012-08-21 A. Rastogi , J. J. Pulikkotil , S. Auluck , Z. Hossain , R. C. Budhani

Recently, x-ray illumination, using synchrotron radiation, has been used to manipulate defects, stimulate self-organization and to probe their structure. Here we explore a method of defect-engineering low-dimensional systems using focused…

The emerging material class of complex-oxides, where manipulation of physical properties lead to new functionalities at their heterointerfaces, is expected to open new frontiers in Spintronics. For example, SrRuO_3 is a promising material…

Strongly Correlated Electrons · Physics 2015-11-09 S. Roy , C. Autieri , B. Sanyal , T. Banerjee

Defects such as dislocations impact materials properties and their response during external stimuli. Defect engineering has emerged as a possible route to improving the performance of materials over a wide range of applications, including…

Materials Science · Physics 2017-11-17 A. Ulvestad , M. Menickelly , S. M. Wild

A description of dislocations and disclinations defects in terms of Riemann--Cartan geometry is given, with the curvature and torsion tensors being interpreted as the surface densities of the Frank and Burgers vectors, respectively. A new…

Materials Science · Physics 2011-07-19 M. O. Katanaev

We report a theoretical \textit{ab-initio} study of $\beta$-As$_2$Te$_3$ ($R\bar{3}m$ symmetry) at hydrostatic pressures up to 12 GPa. We have systematically characterized the vibrational and electronic changes of the system induced by the…

Stacking orders and topological defects substantially influence the physical properties of 2D van der Waals (vdW) materials. However, the inherent features of 2D materials challenge the effectiveness of single characterization techniques in…

Traditionally, X-ray scattering techniques have been used to detect the breaking of the structural symmetry of the lattice, which accompanies a periodic displacement of the atoms associated with charge density wave (CDW) formation in the…

Superconductivity · Physics 2023-05-19 Zengyi Du , Hui Li , Genda Gu , Ahbay N. Pasupathy , John M. Tranquada , Kazuhiro Fujita

Topological defects are the key feature mediating 2D phase transitions. However, both resolution and tunability have been lacking to access the dynamics of the transitions. With dynamic Kerr microscopy, we directly capture the melting of a…

We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0001) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including…

Materials Science · Physics 2018-01-11 K. K. Sabelfeld , V. M. Kaganer , C. Pfüller , O. Brandt