Related papers: Anisotropic spin-valley coupling in SiMOS and Si/S…
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically,…
We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on…
As silicon spin qubit chips are increasing in qubit number and area, methods for the screening of qubit related material parameters become vital. Here we demonstrate the two-dimensional mapping of small variations of the electron g-factor…
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for…
The spin-valley or Kramers qubit promises significantly enhanced spin-valley lifetimes due to strong coupling of the electrons' spin to their momentum (valley) degrees of freedom. In transition metal dichalcogenides (TMDCs) such spin-valley…
We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for…
Quantum dots in silicon are promising candidates for implementation of solid-state quantum information processing. It is important to understand the effects of the multiple conduction band valleys of silicon on the properties of these…
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles…
We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…
We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The…
We investigate the spin relaxation induced by acoustic phonons in the presence of spin-orbit interactions in single electron Si/SiGe lateral coupled quantum dots. The relaxation rates are computed numerically in single and double quantum…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
The discovery of intrinsic spin orbit fields in noncentrosymmetric ferromagnets has attracted considerable interest for both fundamental studies and technological applications. However, once such materials are synthesized, the strength of…
Anisotropy of spin-orbit interaction (SOI) is studied for a single uncapped InAs self-assembled quantum dot (SAQD) holding just a few electrons. The SOI energy is evaluated from anti-crossing or SOI induced hybridization between the ground…
Recent experimental breakthroughs, particularly for single-qubit and two-qubit gates exceeding the error correction threshold, highlight silicon spin qubits as leading candidates for fault-tolerant quantum computation. In the existing…
We consider an electron confined in a gated nanowire quantum dot (NQD) with arbitrarily strong spin-orbit coupling (SOC) and weak static magnetic field, and treat the latter as a perturbation to seek the maximal spin-motion entangled states…
A spin-orbit qubit is a hybrid qubit that contains both orbital and spin degrees of freedom of an electron in a quantum dot. Here we study the exchange coupling between two spin-orbit qubits in a nanowire double quantum dot (DQD) with…
This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal…
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits.…
Inelastic spin relaxation and spin splitting $\epsilon_{\mathrm{s}}$ in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Due to both g-factor energy dependence and spin-orbit coupling $\epsilon_{\mathrm{s}}$…