Related papers: Tunable Valley Polarization in Diamond
Valley degree of freedom besides spin is a promising candidate as a carrier of information. Spintronics has come a long way and spin modulation can be realized by quantum interference and spin-orbit coupling effect. However, the control of…
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single…
Silicon-on-insulator (SOI) enables for capability improvement of modern information processing systems by replacing some of their electrical counterparts. With the miniaturization of SOI platform, backscattering suppression is one of the…
Angular momentum conversion between mechanical rotation and the valley degree of freedom in 2D Dirac materials is investigated theoretically. Coupling between the valley and vorticity of dynamic lattice distortions is derived by applying…
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
Quantum tunneling allows electrons to be transferred between two regions separated by an energetically forbidden barrier. Performing a position measurement that finds a particle in the barrier forces the tunneling electrons to transition…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
We establish a unified, symmetry-driven framework that combines the alternating spin splitting of altermagnets with valley topology to realize and electrically interconvert helical and chiral topological phases within a single material…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
The ability to reversibly toggle between two distinct states in a non-volatile method is important for information storage applications. Such devices have been realized for phase-change materials, which utilizes local heating methods to…
Many quantum networking applications require efficient photonic interfaces to quantum memories which can be produced at scale and with high yield. Synthetic diamond offers unique potential for the implementation of this technology as it…
Underpinning the field of "valleytronics" is the coupling of the helicity of circularly polarized light to the valley degree of freedom, and this remains the only known lightform to exhibit this remarkable effect. Here we show that on…
We assess routes to a diamond-based quantum computer, where we specifically look towards scalable devices, with at least 10 linked quantum gates. Such a computer should satisfy the deVincenzo rules and might be used at convenient…
Recently, there have been significant efforts to guide mechanical energy in structures by relying on a novel topological framework popularized by the discovery of topological insulators. Here, we propose a topological metamaterial system…
We report on transport measurement performed on a room-temperature-operating ultra-small Coulomb blockade devices with a silicon island of sub-5nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of…
We theoretically study transport signatures associated with a spontaneous 2-valley to 1-valley quantum phase transition in a two-dimensional electron gas (2DEG) tuned by decreasing the 2D carrier density, as claimed in a recent experiment…
Although single-layer transition-metal dichalcogenides with novel valley functionalities are promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on…
Valleytronics and valley photonics exploit the valley degree of freedom to encode and manipulate information. Here we show that photonic valleys can be selectively addressed in quantum optics using a simple two-level emitter, provided it is…
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE…