Related papers: Bias controlled Interlayer Exchange Coupling
We analyze the phase transitions of an interacting electronic system weakly coupled to free-electron leads by considering its zero-bias conductance. This is expressed in terms of two effective impurity models for the cases with and without…
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the…
Exchange bias effect is an important attribute in several device applications. Traditionally, it is discussed as a form of exchange anisotropy at the interface between the ferromagnetic/antiferromagnetic layers of two distinct systems. We…
Shrinking spintronic devices to the nanoscale ultimately requires localized control of individual atomic magnetic moments. At these length scales, the exchange interaction plays important roles, such as in the stabilization of…
We study the effect that the electron-electron interaction has on the properties of a multilayer electron system. We consider the case corresponding to filling factor unity in each layer. We find that as a function of the sample parameters…
We study the properties of a few-electron system confined in coupled elongated quantum dots (QDs) using a model Gaussian potential and the numerical exact diagonalization technique. In the absence of magnetic fields, as the aspect ratio $r$…
The system under study is a twin-layered square lattice gas at half-filling, being driven to non-equilibrium steady states by a large, finite `electric' field. By making intra-layer couplings unequal we were able to extend the phase diagram…
We performed Monte Carlo simulations in a bilayer system composed by two thin films, one ferromagnetic (FM) and the other antiferromagnetic (AFM). Two lattice structures for the films were considered: simple cubic (sc) and a body center…
A model consisting of random interacting anti-ferromagnetic (AF) grains coupled to a ferromagnetic (FM) layer is developed to study the exchange bias phenomenon. This simple model is able to describe several exchange bias behavior observed…
Recent experiments have realized steady-state electrical injection of interlayer excitons in electron-hole bilayers subject to a large bias voltage. In the ideal case in which interlayer tunneling is negligibly weak, the system is in…
We report the exchange bias (EB) effect along with tunneling magnetoresistance (MR) in polycrystalline La_{0.88}Sr_{0.12}CoO_3. Analogous to the shift in the magnetic hysteresis loop along the field (H)-axis a shift is clearly observed in…
Layered magnets have recently received tremendous attention, however, spin-exchange coupling mechanism across their interlayer regions is yet to be revealed. Here, we report a Bethe-Slater-curve (BSC) like behavior in nine transition metal…
The interlayer spin correlations in the magnetic/non-magnetic semiconductor superlattices are reviewed. The experimental evidences of interlayer exchange coupling in different all-semiconductor structures, based on neutronographic and…
We investigate the effect of a vertical electric field on a Dirac semimetal thin film. We show that through the interplay between the quantum confinement effect and the field-induced coupling between sub-bands, the sub-band gap can be tuned…
We construct a microscopic model based on superexchange theory for a moir\'e bilayer in chromium trihalides (Cr$X_3$, $X=$Br, I). In particular, we derive analytically the interlayer Heisenberg exchange and the interlayer…
Controlling magnetism by purely electrical means is a key challenge to better information technology1. A variety of material systems, including ferromagnetic (FM) metals2,3,4, FM semiconductors5, multiferroics6,7,8 and magnetoelectric (ME)…
This work explores the static and dynamic magnetic properties of weakly antiferromagnetically coupled Fe/Ti superlattices, emphasizing the link between magnetic behavior and structural characteristics. HRTEM and XRD analyses confirm…
We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a…
The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure,…
By means of layer resolved ion irradiation the mechanisms involved in the irradiation driven modifications of the exchange bias effect in NiFe/FeMn bilayers have been investigated. It is shown that not only the locations of the defects but…