Related papers: Light-modulated exchange bias in multiferroic hete…
We have stabilized the {\alpha}-Fe1.6Ga0.4O3 (Ga doped {\alpha}-Fe2O3) system in rhombohedral structure. The system has shown magnetically canted ferromagnetic state and ferroelectric properties at room temperature. In first time, we…
Coupling different physical properties is a fascinating subject of physics. Already well-known are the multiferroics which show properties of ferroelectrics and magnets. But ferroelectricity by itself also entails the bulk photovoltaic…
It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)As are sensitive to lattice strains as small as 10^-4 and that strain can be controlled by lattice parameter engineering during growth, through post growth lithography,…
Intrinsic magnetoelectric coupling describes the interaction between magnetic and electric polarization through an inherent microscopic mechanism in a single phase material. This phenomenon has the potential to control the magnetic state of…
A common scenario of magnetoelectric coupling in multiferroics is the electric polarization induced by spatially modulated spin structures. It is shown in this paper that the same mechanism works in magnetic dielectrics with inhomogeneous…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in…
The capacity to manipulate magnetization in two-dimensional dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2, where M = V, Fe, Cr; T = W,…
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…
The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high…
Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk…
Magnetoelectric multiferroics in which ferroelectricity and magnetism coexist have attracted extensive attention because they provide great opportunities for the mutual control of electric polarization by magnetic fields and magnetization…
Electric-field controlled exchange bias in a heterostructure composed of the ferromagnetic manganite La0.7Sr0.3MO3 and the ferroelectric antiferromagnetic BiFeO3 has recently been demonstrated experimentally. By means of a microscopic model…
A family of ferrimagnets (CoV2O4, GdCo, TbCo) exhibits out-of-plane magnetic anisotropy when strained compressively and in-plane magnetic anisotropy when strained expansively (or vice versa). If such a ferrimagnetic thin film is placed on…
We report studies of exchange bias and coercivity in ferromagnetic Ni$_{81}$Fe$_{19}$ layers coupled to antiferromagnetic (AF) (0001), (11$\bar{2}$0), and (11$\bar{0}$2) $\alpha$-Fe$_2$O$_3$ layers. We show that AF spin configurations which…
Ultrafast non-thermal manipulation of magnetization by light relies on either indirect coupling of the electric field component of the light with spins via spin-orbit interaction or direct coupling between the magnetic field component and…
Magnetization reversal of soft ferromagnetic Fe layer, coupled to [Co/Pt]ML multilayer [ML] with perpendicular magnetic anisotropy (PMA), has been studied in-situ with an aim to understand the origin of exchange bias (EB) in orthogonal…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
We study the photoinduced magnetic transition in an itinerant magnet described by the double-exchange model, in which conduction electrons couple with localized spins through the ferromagnetic (FM) Hund coupling. It is shown that intense…
Due to the lack of a net magnetic moment, antiferromagnets possess a unique robustness to external magnetic fields and are thus predicted to play an important role in future magnetic technologies. However, this robustness also makes them…