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Neuromorphic computing architectures enable the dense co-location of memory and processing elements within a single circuit. This co-location removes the communication bottleneck of transferring data between separate memory and computing…
Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for…
Main memories play an important role in overall energy consumption of embedded systems. Using conventional memory technologies in future designs in nanoscale era causes a drastic increase in leakage power consumption and temperature-related…
Non-volatile memory (NVM) technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque magnetic random access memory (SOT-MRAM) have significant advantages compared to conventional SRAM due to…
At the end of Silicon roadmap, keeping the leakage power in tolerable limit and bridging the bandwidth gap between processor and memory have become some of the biggest challenges. Several promising Non-Volatile Memories (NVMs) such as,…
Non-volatile memory (NVM) is an emerging technology, which has the persistence characteristics of large capacity storage devices(e.g., HDDs and SSDs), while providing the low access latency and byte-addressablity of traditional DRAM memory.…
Printed and flexible electronics (PFE) have emerged as the ubiquitous solution for application domains at the extreme edge, where the demands for low manufacturing and operational cost cannot be met by silicon-based computing. Built on…
Computing-in-Memory (CiM) architectures aim to reduce costly data transfers by performing arithmetic and logic operations in memory and hence relieve the pressure due to the memory wall. However, determining whether a given workload can…
DRAM-based main memory and its associated components increasingly account for a significant portion of application performance bottlenecks and power budget demands inside the computing ecosystem. To alleviate the problems of storage density…
As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
Non-volatile memory (NVM) based compute-in-memory (CIM) accelerators have emerged as a sustainable solution to significantly boost energy efficiency and minimize latency for Deep Neural Networks (DNNs) inference due to their in-situ data…
In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for energy-efficient deep neural network (DNN) accelerators. Various technologies (CMOS and post-CMOS) have been explored as synaptic device candidates, each with its…
This work proposes CoMET, a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure - a ferromagnet (FM) with in-plane magnetic…
Processing in memory (PiM) represents a promising computing paradigm to enhance performance of numerous data-intensive applications. Variants performing computing directly in emerging nonvolatile memories can deliver very high energy…
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…
Bayesian Neural Networks (BNNs) provide superior estimates of uncertainty by generating an ensemble of predictive distributions. However, inference via ensembling is resource-intensive, requiring additional entropy sources to generate…
The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…
Non-volatile memory (NVM) is a promising technology for low-energy and high-capacity main memory of computers. The characteristics of NVM devices, however, tend to be fundamentally different from those of DRAM (i.e., the memory device…
There is an extremely high demand for a high speed, low power, low leakage, and low noise Static Random-Access Memory (SRAM) for high performance cache memories. The energy efficiency of SRAM is of paramount importance in both high…