Related papers: Electrostatic Effects of Self Trapped Holes in Gal…
Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light…
Gallium oxide (Ga2O3), with its ultra-wide bandgap (approximately 4.8 eV) and high breakdown field (approximately 8 MV per cm), is a leading candidate for photoconductive semiconductor switches (PCSSs) in high-power and high-speed pulsed…
Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…
Ultrafast photocurrent experiments are performed on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. The photogenerated excitons are dissociated at large electric fields and the resulting…
Gallium phosphide offers an attractive combination of a high refractive index ($n>3$ for vacuum wavelengths up to 4 {\mu}m) and a wide electronic bandgap (2.26 eV), enabling optical cavities with small mode volumes and low two-photon…
Tunneling between a photo-excited p-type silicon tip and a gold surface is studied as a function of tip bias, tip/sample distance and light intensity. In order to extend the range of application of future spin injection experiments, the…
Transport measurements made on films of thallium-oxide (n-type semiconductor) are presented and discussed. The focus in this work is on the strongly-localized regime where charge transport is by variable-range-hopping. It is demonstrated…
The study of metallic nanoparticles has a long tradition in linear and nonlinear optics [1], with current emphasis on the ultrafast dynamics, size, shape and collective effects in their optical response [2-6]. Nanoparticles also represent…
$\beta$-Ga$_2$O$_3$ is a semiconductor with bandgap in the deep-UV ~ 5 eV. Due to its strong phonon-hole coupling, holes are self-trapped inhibiting bandgap luminescence at the deep-UV. In contrast, the self-trapped holes (STH) can exhibit…
The influence of the Hall voltage on the photoluminescence of a dense hydrodynamic electron-hole plasma laser generated in a mesoscopic n-doped GaAs channel under intense laser excitation is studied. Laser excitation induces an interband…
Composite oxides have been indeed proved to be valuable materials in optoelectronic applications. The combination of indium oxide and gallium oxide and other materials can lead to enhanced optical and electronic properties, making them…
$\beta-Ga_{2}O_{3}$ is an unusual semiconductor where large electric fields (~1-6 MV/cm) can be applied while still maintaining a dominant excitonic absorption peak below its ultra-wide bandgap. This provides a rare opportunity in the…
Understanding the carrier excitation and transport processes at the single-charge level plays a key role in quantum-dot-based solar cells and photodetectors. Here, we report on Coulomb-induced giant photocurrent enhancement of positive…
The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. Firstly, as-grown GaP films show a high RON/ROFF (~10^4), shown to arise from the…
Photoconductive devices based on ultra-wide-bandgap (UWBG) materials offer a promising pathway toward compact, high-voltage (HV) optoelectronic and optical sensing in harsh environments. In this Letter, we report field-tunable nonlinear…
Nonlinear interactions between ultrashort optical waveforms and solids can be used to induce and steer electric current on a femtosecond (fs) timescale, holding promise for electronic signal processing at PHz frequencies [Nature 493, 70…
We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A…
The dynamic interplay between light and electric field control of charge states lies at the heart of developing multifunctional optoelectronic devices. While persistent photoconductivity (PPC) and gate-voltage (VG)-induced electron trapping…
Point defects in crystalline materials often occur in multiple charge states. Although many experimental methods to study and explore point defects are available, techniques to explore the non-equilibrium dynamics of the charge states of…
Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The…