Related papers: Two-electron spectrum of a silicon quantum dot
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an…
Exchange-coupled singlet-triplet spin qubits in two gate-defined double quantum dots are considered theoretically. Using charge density operators to describe the double-dot orbital states, we calculate the Coulomb couplings between the…
Coherent interconnects between gate-defined silicon quantum processing units are essential for scalable quantum computation and long-range entanglement. We argue that one-dimensional electron channels formed in the silicon quantum well of a…
We theoretically consider the effects of having unintentional charged impurities in laterally coupled two-dimensional double (GaAs) quantum dot systems, where each dot contains one or two electrons and a single charged impurity in the…
We develop a theory of inter-valley Coulomb scattering in semiconducting carbon-nanotube quantum dots, taking into account the effects of curvature and chirality. Starting from the effective-mass description of single-particle states, we…
An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…
Two-electron states bound to donors in silicon are important for both two qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight-binding basis to capture multi-electron exchange and…
We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6…
We review our investigation of the spin dynamics for two electrons confined to a double quantum dot under the influence of the hyperfine interaction between the electron spins and the surrounding nuclei. Further we propose a scheme to…
Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that…
The transport of quantum information between different nodes of a quantum device is among the challenging functionalities of a quantum processor. In the context of spin qubits, this requirement can be met by coherent electron spin shuttling…
The role of electronic interactions in the level structure of semiconductor quantum dots is analyzed in terms of the correspondence to the integrability of a classical system that models these structures. We find that an otherwise simple…
Quantum computing architectures require an accurate and efficient description in terms of many-electron states. Recent implementations include quantum dot arrays, where the ground state of a multi q-bit system can be altered by voltages…
An electron confined by a semiconductor quantum dot (QD) can be displaced by changes in electron occupations of surrounding QDs owing to the Coulomb interaction. For a single-spin qubit in an inhomogeneous magnetic field, such a…
We study the effect of mesoscopic fluctuations on the magnitude of errors that can occur in exchange operations on quantum dot spin-qubits. Mid-size double quantum dots, with an odd number of electrons in the range of a few tens in each…
We study the effect of the spin-orbit interaction on heavy holes confined in a double quantum dot in the presence of a magnetic field of arbitrary direction. Rich physics arise as the two hole states of different spin are not only coupled…
We investigate the entanglement properties in semiconductor quantum dot systems modeled by extended Hubbard model, focusing on the impact of potential energy variations and electron interactions within a four-site quantum dot spin chain.…
There has been significant progress in the implementation and manipulation of singlet-triplet qubits in GaAs quantum dots. Given the considerably longer spin coherence times measured in Si, considerable interest has been generated recently…
In Si quantum dots, valley degree of freedom, in particular the generally small valley splitting and the dot-dependent valley-orbit phase, adds complexities to the low-energy electron dynamics and the associated spin qubit manipulation.…
We theoretically describe the spin excitation spectrum of a two dimensional electron gas embedded in a quantum well with localized magnetic impurities. Compared to the previous work, we introduce equations that allow to consider the…