Related papers: Profound impacts of interlayer interactions in bil…
Altermagnets, a recently discovered class of magnetic materials exhibiting ferromagnetic-like spin-split bands and antiferromagnetic-like compensated magnetic order, have attracted significant interest for next-generation spintronic…
The performance of electronic and spintronic devices based on two-dimensional semiconductors (2D SC) is largely dependent on the quality and resistance of the metal/SC electrical contacts, as well as preservation of the intrinsic properties…
We first derive the energy dispersion of bilayer MoS$_{2}$ in the presence of a perpendicular electric field $E_z$. We show that the band gap and layer splitting can be controlled by the field $E_z$. Away from the $k$ point, the intrinsic…
Electrical control of spin and magnetic sublattice degrees of freedom is essential for multifunctional and low-power spintronic devices. Bipolar altermagnetic semiconductors (BAMSs)-characterized by opposite spin polarizations at the…
Altermagnets combine vanishing net magnetization with nonrelativistic, momentum-dependent spin splitting, offering a new paradigm for spintronics. Spin-crystal symmetry coupling, namely spin-lattice locking, is the defining mechanism of…
The discovery of altermagnetism offers new opportunities for exploring novel quantum states and developing spintronic devices for enabling momentum dependent spin splitting in compensated systems, while zero net magnetization limit its…
We propose an altermagnet-topological insulator bilayer as a platform to engineer Berry phase driven spin-charge responses using an interfacial buffer layer. Using a momentum-space lattice model and linear-response theory, we investigate a…
Spin-orbit interactions are known to have drastic effects on the band structure of heavy-element-based materials. Celebrated examples are the recently identified 3D and 2D topological insulators. In those systems transport takes place at…
We reveal by first-principles calculations that the interlayer binding in a twisted MoS2/MoTe2 heterobilayer decreases with increasing twist angle, due to the increase of the interlayer overlapping degree, a geometric quantity describing…
Altermagnetism, as a new branch of magnetism independent of traditional ferromagnetism and antiferromagnetism, has attracted extensive attention recently. At present, researchers have proved several kinds of three-dimensional altermagnets,…
We report the superconducting properties of the Co/Pb/Co heterostructures with thin insulating interlayers. The main specific feature of these structures is the intentional oxidation of both superconductor/ferromagnet (S/F) interfaces. We…
Bilayer van der Waals (vdW) heterostructures such as MoS2/WS2 and MoSe2/WSe2 have attracted much attention recently, particularly because of their type II band alignments and the formation of interlayer exciton as the lowest-energy…
Bilayer MoS2 is a centrosymmetric semiconductor with degenerate spin states in the six valleys at the corners of the Brillouin zone. It has been proposed that breaking of this inversion symmetry by an out-of-plane electric field breaks this…
Correlated two-dimensional (2D) layers, like 1T-phases of TaS2, TaSe2 and NbSe2, exhibit rich tunability through varying interlayer couplings, which promotes the understanding of electron-correlation in the 2D limit. However, the coupling…
The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet…
Employing $\textit{ab-initio}$ density functional theory (DFT), we performed a systematic investigation of the electronic structures and the magnetic properties of atomic bilayers composed of a 4$d$ transition-metal layer (Rh, Pd and Ru)…
Altermagnets, a novel class of collinear magnetic materials, exhibit unique spin-split band structures, yet topological insulating states in intrinsic altermagnetic systems are rare. Here, we identify monolayer Fe$_2X_2$O ($X$ = Cl, Br, I)…
Stable and remarkable valley polarization effect is the key to utilizing valley degree of freedom in valleytronic devices. According to first-principles calculations and symmetry analysis, we reveal that valley polarization effect in…
We utilize the fluctuation-exchange approximation on a bilayer two-orbital model, incorporating $d_{x^2-y^2}$ and $d_{z^2}$ orbitals, to explore potential pairing symmetries in the bilayer nickelate La$_3$Ni$_2$O$_7$. Our study particularly…
Changing the interlayer exchange coupling between magnetic layers in-situ is a key issue of spintronics, as it allows for the optimization of properties that are desirable for applications, including magnetic sensing and memory. In this…