Related papers: Antiferromagnetic Pure Spin Current Memdevices
Spin Hall effects interconvert spin- and charge currents due to spin-orbit interaction, which enables convenient electrical generation and detection of diffusive spin currents and even collective spin excitations in magnetic solids. Here,…
Modern magnetic memory technology requires unconventional transverse spin current to achieve deterministic switching of perpendicular magnetization. Spin current in antiferromagnets (AFMs) has been long thought to be trivial as nonmagnets.…
We show that local injection of pure spin current into an electrically disconnected ferromagnetic - normal-metal sandwich induces electric currents, that run along closed loops inside the device, and are powered by the source of the spin…
The spin Hall effect (SHE), which converts a charge current into a transverse spin current, has long been believed to be a phenomenon induced by the spin--orbit coupling. Here, we propose an alternative mechanism to realize the intrinsic…
Generation of spin current from lattice distortion dynamics in metals is studied with special attention on the effect of spin-orbit coupling. Treating the lattice distortion by local coordinate transformation, we calculate spin current and…
Magnon spin transport in a metal-antiferromagnetic insulator-ferromagnetic insulator heterostructure is considered. The spin current is generated via the spin Seebeck effect and in the limit of clean sample where the effects of interface…
The spin Hall effect (SHE) is an important spintronics phenomenon, which allows transforming a charge current into a spin current and vice versa without the use of magnetic materials or magnetic fields. To gain new insight into the physics…
Spin transport via electrons is typically plagued by Joule heating and short decay lengths due to spin-flip scattering. It is known that dissipationless spin currents can arise when using conventional superconducting contacts, yet this has…
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical…
Using a pure electric current to control kagome noncollinear antiferromagnets is promising in information storage and processing, but a full description is still lacking, in particular, on intrinsic (i.e., no external magnetic fields or…
We propose a time-reversal-even spin generation in second order of electric fields, which dominates the current induced spin polarization in a wide class of centrosymmetric nonmagnetic materials, and leads to a novel nonlinear spin-orbit…
Along with the progress of spin science and spintronics research, the flow of electron spins, (i.e. spin current), has attracted interest. New phenomena and electronic states were explained in succession using the concept of spin current.…
Spin pumping is an interfacial spin current generation from the ferromagnetic layer to the non-magnetic metal at its interface. The polarization of the pumped spin current $\textbf{J}_s \propto \textbf{m}\times \dot{\textbf{m}}$ depends on…
Generating a pure spin current using electrons, which have degrees of freedom beyond spin, such as electric charge and valley index, presents challenges. In response, we propose a novel mechanism based on intervalley exciton dynamics in…
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
Antiferromagnetic (AFM) materials with zero or vanishingly small macroscopic magnetization are nowadays the constituent elements of spintronic devices. However, possibility to use them as active elements that show nontrivial controllable…
Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…
Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…
For a long time, there have been no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was…
Manipulation of directional magnon propagation, known as magnon spin current, is essential for developing magnonic memory and logic devices featuring nonvolatile functionalities and ultralow power consumption. Magnon spin current can…