Related papers: Realizing giant valley polarization effect based o…
In Weyl semimetals the application of parallel electric and magnetic fields leads to valley polarization -- an occupation disbalance of valleys of opposite chirality -- a direct consequence of the chiral anomaly. In this work, we present…
Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing new functionalities. The rich opportunity offered by the…
Monolayer $MoS_2$ is a typical valleytronic material with valley-spin locked valence bands. We numerically investigate the valley-spin polarized current in monolayer $\rm MoS_2$ via adiabatic electron pumping. By introducing an exchange…
Although single-layer transition-metal dichalcogenides with novel valley functionalities are promising candidate to realize valleytronic devices, the essential understanding of valley depolarization mechanisms is still incomplete. Based on…
Selective control over the emission pattern of valley-polarized excitons in monolayer transition metal dichalcogenides is crucial for developing novel valleytronic, quantum information, and optoelectronic devices. While significant progress…
Altermagnets have recently been recognized as a distinct class of magnetic materials characterized by alternative spin-split electronic structures without net magnetization. Despite intensive studies on their single-particle spintronic and…
Altermagnetism -a magnetic state characterized by spin-polarized electronic bands at zero net magnetization- offers a promising route for next-generation spintronic devices. In two-dimensional (2D) magnets, twist engineering enables its…
The valley Hall effect (VHE) holds great promise for valleytronic applications by leveraging the valley degree of freedom. To date, research on VHE has focused on its linear response to an applied current, leaving nonlinear valley responses…
The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der…
Two-dimensional (2D) van der Waals (vdW) magnets and devices have garnered significant attention owing to the stabilization of long range magnetic order down to atomic limit, and the prospect for novel quantum devices with unique…
Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal laboratory for exploring both new physical phenomena and…
We study theoretically the electron current across a monolayer graphene/hexagonal boron nitride/bilayer graphene tunnelling junction in an external magnetic field perpendicular to the layers. We show that change in effective tunnelling…
Van der Waals (vdW) heterostructures enable tailored electronic and magnetic phases by stacking atomically thin layers with pristine interfaces. Here, we investigate fully 2D Cr2Ge2Te6/WTe2 heterostructures and identify a strong enhancement…
Magnetism in doped transition metal dichalcogenide monolayers and van der Waals interfaced materials have motivated the search for sustainable magnetic states at the nanoscale with the prospect of building devices for spintronics…
One of the key problems in valleytronics is to realize valley polarization. Ferrovalley (FV) semiconductor and half-valley-metal (HVM) have been proposed, which possess intrinsic spontaneous valley polarization. Here, we propose the concept…
We study spin and valley-dependent transport properties in an n-p-n junction of 8-pmmn borophene monolayer. An external gate voltage and exchange magnetic field, induced by the proximity effect of a ferromagnetic insulator, are applied to…
Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave…
Van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next generation spintronic devices. When layered with non-magnetic vdW materials, such as graphene and/or topological…
We propose a novel ferroelectric switchable altermagnetism effect, the reversal of ferroelectric polarization is coupled to the switching of altermagnetic spin splitting. We demonstrate the design principles for the ferroelectric…
Two-dimensional (2D) Janus materials hold a great importance in spintronic and valleytronic applications due to their unique lattice structures and emergent properties. They intrinsically exhibit both an in-plane inversion and out-of-plane…