Related papers: Realizing giant valley polarization effect based o…
The time-reversal symmetry is thought to be a necessary condition for realizing valley Hall effect. If the time-reversal symmetry is broken, whether the valley Hall effect can be realized has not been explored. In this letter, based on…
The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…
Compared to the ferromagnetic materials that realize the anomalous valley Hall effect by breaking time-reversal symmetry and spin-orbit coupling, the antiferromagnetic materials with the joint spatial inversion and time-reversal (PT)…
Altermagnets (AMs) are a recently identified class of unconventional collinear compensated antiferromagnets that exhibit momentum-dependent spin splitting despite having zero net magnetization. This unconventional magnetic order gives rise…
The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley…
Valley Hall effect is fundamental to valleytronics and provides a promising avenue for advancing information technology. While conventional valley Hall effect requires the inversion symmetry breaking, the recently proposed nonlinear valley…
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…
We propose a mechanism where the valley splitting is caused by an in-plane electric polarization and the coupling between the two makes it possible for an electric field to control the valley degree of freedom. We demonstrate this by…
Altermagnets provide promising platforms for unconventional magnetism, whose controllability would enable a whole new generation of spintronic devices. While a variety of bulk altermagnets have been discovered, altermagnetism in…
According to the recent studies on sliding/moire ferroelectricity, most 2D van der Waals nonferroelectric monolayers can become ferroelectric via multilayer stacking. In this paper we propose that similar strategy can be used to induce…
A new degree of freedom, the valley pseudospin, emerges in atomically thin two-dimensional transition metal dichalcogenides (MX2) and has attracted great scientific interest. The capability to manipulate the valley pseudospin, in analogy to…
A monolayer of a transition metal dichalcogenide (TMD) such as WSe$_2$ is a two-dimensional (2D) direct band-gap valley-semiconductor having an effective Honeycomb lattice structure with broken inversion symmetry. The inequivalent valleys…
Valleytronics aims to control electrons in a valley-specific manner for quantum information manipulation. Due to their strong in-plane anisotropy, which enables polarization-controlled optical transitions to distinct nondegenerate valleys,…
In this Letter, a tunable valley polarization is investigated for honeycomb systems with broken inversion symmetry such as transition-metal dichalcogenide MX2 (M = Mo, W; X = S, Se) monolayers through elliptical pumping. As compared to…
The altermagnetism can achieve spin-split bands in collinear symmetry-compensated antiferromagnets. Here, we predict altermagnetic order in Janus monolayer $\mathrm{Cr_2SO}$ with eliminated inversion symmetry, which can realize the…
The valley dependent optical selection rules in recently discovered monolayer group-VI transition metal dichalcogenides (TMDs) make possible optical control of valley polarization, a crucial step towards valleytronic applications. However,…
Valley-related multiple Hall effect and piezoelectric response are novel transport characteristics in low-dimensional system, however few studies have reported their coexistence in a single system as well as their coupling relationships. By…
Exploring combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is one of the most important questions for valleytronic applications. The key to address this issue is to achieve spin splitting around the…
Superior to ferromagnetic (FM) valleytronics, antiferromagnetic (AFM) counterpart exhibits ultradense and ultrafast potential due to their intrinsic advantages of zero stray field, terahertz dynamics, and compensated moment of…