Related papers: Eccentricity valley Hall effect
We develop a theory for the nonlocal measurement of nonlinear valley Hall effect. Different from the linear case where the direct and the inverse processes are reciprocal, we unveil that the nonlinear inverse valley Hall effect needed to…
Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum phenomena and potential application in information…
The interplay between topology and valley degree of freedom has attracted much interest because it can realize new phenomena and applications. Here, based on first-principles calculations, we demonstrate intrinsically valley-polarized…
The multifrequency quantum valley Hall effect (QVHE) with a large valley Chern number has been realized to significantly improve the transmission capacity of topological waveguides and increase the mode density of topological waveguides.…
Exploiting the valley degree of freedom introduces a novel paradigm for advancing quantum information technology. Currently, the investigation on spontaneous valley polarization mainly focuses on two major types of systems. One type…
With low-buckled structure for each layer in graphene bilayer system, there breaks inversion symmetry (P-symmetry) for one stacking when both A and B sublattices in top layer are aligned with those in bottom layer. In consideration of…
Graphene, and other members of the monolayer Xene family, represent an ideal materials platform for "valleytronics", the control of valley localized charge excitations. The absence of a gap in these semi-metals, however, precludes valley…
We show that for the case of a many valley host semiconductor an edge channel (EC) related non-local behaviour can persist also in the 3D-regime where the quantum Hall effect (QHE) is already quenched. We demonstrate that the QHE is…
The combination of altermagnetism, twistronics and valleytronics is of great significance for potential applications in advanced electronic devices. Twisted magnetic van der Waals bilayers have been identified as an ideal platform for…
Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any net magnetic moment and are robust to external magnetic perturbation with ultra-high dynamic speed. To achieve spontaneous valley polarization and…
The topological properties of a material's electronic structure are encoded in its Berry curvature, a quantity which is intimately related to the transverse electrical conductivity. In transition metal dichalcogenides with broken inversion…
Developing alternative paradigms of electronics beyond silicon technology requires the exploration of fundamentally new physical mechanisms, such as the valley specific phenomena in hexagonal two-dimensional materials. We realize ballistic…
Valley, as a new degree of freedom, raises the valleytronics in fundamental and applied science. The elastic analogs of valley states have been proposed by mimicking the symmetrical structure of either two-dimensional materials or photonic…
We experimentally investigate the valley-Hall effect for interfacial edge states, highlighting the importance of the modal patterns, between geometrically distinct regions within a structured elastic plate. These experiments, for vibration,…
Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however,…
Type-II Dirac/Weyl points, although impermissible in particle physics due to Lorentz covariance, were uncovered in condensed matter physics, driven by fundamental interest and intriguing applications of topological materials. Recently,…
Valley degree of freedom, an excellent information carrier in valleytronics, has been further introduced into advanced microstructure systems for achieving the acoustic valley-Hall topological insulators (VHTIs), which host valley-projected…
The integration of ferroelectric (FE) and antiferromagnetic (AFM) orders in twodimensional (2D) materials provides a promising avenue for the nonvolatile control of coupled spin and valley degrees of freedom, a capability central to…
Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good ferrovalley material should possess perpendicular magnetic…