Related papers: Polarization transfer force on ferroelectric domai…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
Sliding ferroelectrics constructed from stacked nonpolar monolayers enable out-of-plane polarization in two dimensions with exceptional properties, including ultrafast switching speeds and fatigue-free behavior. However, the widely accepted…
Spin-polarized electric current exerts torque on local magnetic spins, resulting in magnetic domain-wall (DW) motion in ferromagnetic nanowires. Such current-driven DW motion opens great opportunities toward next-generation magnetic devices…
Domain walls are the topological defects that mediate polarization reversal in ferroelectrics, and they may exhibit quite different geometric and electronic structures compared to the bulk. Therefore, a detailed atomic-scale understanding…
Modulating the polarization of a beam of quantum particles is a powerful method to tailor the macroscopic properties of the ensuing energy flux as it directly influences the way in which its quantum constituents interact with other…
The ability to switch between distinct states of polarization comprises the defining property of ferroelectrics. However, the microscopic mechanism responsible for switching is not well understood and theoretical estimates based on coherent…
We present a first-principles study of model domain walls (DWs) in prototypic ferroelectric PbTiO3. At high temperature the DW structure is somewhat trivial, with atoms occupying high- symmetry positions. However, upon cooling the DW…
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…
Understanding and manipulating nanoscale domain wall (DW) dynamics is a central topic in magnetism and spintronics for its promising applications in logic and memory devices. In most magnetic systems, inertia affects only transient DW…
The transmission of correlated electrons through a domain wall in a ferromagnetic one dimensional system is studied theoretically in the limit of a domain wall width smaller or comparable to the electron Fermi wavelength. The domain wall…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…
Sliding ferroelectricity in bilayer van der Waals materials exhibits ultrafast switching speed and fatigue resistance during the polarization switching, offering an avenue for the design of memories and neuromorphic devices. The unique…
It was recently observed that materials showing most striking multiferroic phenomena are frustrated spin-density-wave magnets. We present a simple phenomenological theory, which describes the orientation of the induced electric polarization…
When subjected to electro-mechanical loading, ferroelectrics see their polarization evolve through the nucleation and evolution of domains. Existing mesoscale phase-field models for ferroelectrics are typically based on a gradient-descent…
We theoretically study the motion of a magnetic domain wall induced by transverse elastic waves in a one-dimensional magnetic wire, which respects both rotational and translational symmetries. By invoking the conservation of the associated…
In most ferromagnets the magnetization rotates from one domain to the next with no preferred handedness. However, broken inversion symmetry can lift the chiral degeneracy, leading to topologically-rich spin textures such as spin-spirals and…
Interface physics in oxide heterostructures is pivotal in material's science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging…
In order to explain recent experiments reporting a motion of magnetic domain walls (DW) in nanowires carrying a current, we propose a modification of the spin transfer torque term in the Landau-Lifchitz-Gilbert equation. We show that it…
The motion of ferroelectric domain walls (DW) is critical for various technological applications of ferroelectric materials. One important question that is of interest both scientifically and technologically is whether the ferroelectric DW…
Electronic conduction along individual domain walls (DWs) has been reported in BiFeO$_3$ (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains)…