Related papers: A Compact XOR Gate Implemented With a Single Strai…
In this paper, we propose a new method of applying the XOR and XNOR gates on exponentially large superpositions in Instantaneous Noise-Based Logic. These new gates are repeatable, and they can achieve an exponential speed up in computation…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
In this study, we construct the quantum reversible counterparts of the logical AND, OR, XOR, NOR, and NAND gates. We utilize a quantum Fourier transform (QFT)-based adder circuit that replicates the functionality of a digital half-adder,…
Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of…
The linearly inseparable XOR problem and the related problem of representing binary logical gates is revisited from the point of view of temporal encoding and its solvability by spiking neural networks with minimal configurations of leaky…
The design of gate drivers is an important topic in power converter topologies that can help reduce switching losses and increase power density. Gate driving techniques that offer zero-voltage switching and/or zero current switching have…
We address XOR gate response in a mesoscopic ring threaded by a magnetic flux $\phi$. The ring, composed of identical quantum dots, is symmetrically attached to two semi-infinite one-dimensional metallic electrodes and two gate voltages,…
A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed layers. It has the functionality of a majority gate and is…
We construct single input logic gates using the energy sharing collisions of a minimal number of (three) bright optical solitons associated with the three soliton solution of the integrable Manakov system. As computation requires state…
Silicon metal-oxide-semiconductor (MOS) spin qubits have become a promising platform for quantum information processing, with recent demonstrations of high-fidelity single and two-qubit gates. To move beyond a few qubits, however, more…
In present work a new XNOR gate using three transistors has been presented, which shows power dissipation of 550.7272$\mu$W in 0.35$\mu$m technology with supply voltage of 3.3V. Minimum level for high output of 2.05V and maximum level for…
Practical memristor came into picture just few years back and instantly became the topic of interest for researchers and scientists. Memristor is the fourth basic two-terminal passive circuit element apart from well known resistor,…
In this article, we present a dynamical scheme to obtain a reconfigurable noise-aided logic gate, that yields all six fundamental 2-input logic operations, including the XOR operation. The setup consists of two coupled bistable subsystems…
Memristor-aided logic (MAGIC) design style holds a high promise for realizing digital logic-in-memory functionality. The ability to implement a specific gate in a MAGIC design style hinges on the SET-to-RESET threshold ratio. The TaOx…
New to neuroscience with implications for AI, the exclusive OR, or any other Boolean gate may be biologically accomplished within a single region where active dendrites merge. This is demonstrated below using dynamic circuit analysis.…
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…
Spiking neural networks encode information in spike timing and offer a pathway toward energy efficient artificial intelligence. However, a key challenge in spiking neural networks is realizing nonlinear and expressive computation in…
Power dissipation in integrated circuits is one of the major concerns to the research community, at the verge when more number of transistors are integrated on a single chip. The substantial source of power dissipation in sequential…
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…