Related papers: Strain patterning of flexomagnetism
Symmetry constraints determine which physical responses are allowed in a given system. Magnetization induced by strain fields, such as in piezomagnetic and flexomagnetic effects, has typically been considered in materials that break…
Antiferromagnetic materials are promising platforms for the development of ultra-fast spintronics and magnonics due to their robust magnetism, high-frequency relativistic dynamics, low-loss transport, and the ability to support topological…
We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different…
Influence of applied in-plane elastic strains on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB thin film. The in-plane strains are induced via the application of a voltage to a piezoelectric actuator on which the…
Modern electromechanical actuators and sensors rely on the piezoelectric effect that linearly couples strain and electric polarization. However, this effect is restricted to materials that lack inversion symmetry. In contrast, the…
The phenomenon of ferromagnetic resonance (FMR) provides fundamental information on the physics of magnetic materials and lies at the heart of a variety of signal processing microwave devices. Here we demonstrate theoretically that…
The ability to make controlled patterns of magnetic structures within a nonmagnetic background is essential for several types of existing and proposed technologies. Such patterns provide the foundation of magnetic memory and logic devices,…
Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin…
The coupling between strain gradients and polarization, known as flexoelectricity, offers a new mechanism to control the functionality of dielectric materials. However, for the effect to be practically attractive, dynamic control of the…
Two-dimensional materials are extraordinarily sensitive to external stimuli, making them ideal for studying fundamental properties and for engineering devices with new functionalities. One such stimulus, strain, affects the magnetic…
We report first-principle atomistic simulations on the effect of local strain gradients on the nanoscale domain morphology of free-standing PbTiO$_3$ ultrathin films. First, the ferroelectric properties of free films at the atomic level are…
X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thickness reveals the presence of internal strain gradients across the film thickness and allows us to propose a functional form for the internal strain profile.…
Flexoelectricity phenomenon is the response of electric polarization to an applied strain gradient and is developed as a consequence of crystal symmetry in all materials. In this study, we show that the presence of strain gradient in…
The flexoelectric behaviors of solids under high strain gradient can be distinct from that under low strain gradient. Using the generalized Bloch theorem, we investigate theoretically the transversal flexoelectric effects in bent MgO…
We show that a ferromagnetic (FM) order in the orthorhombic CaRuO3, which is a non-magnetic and iso-structural analog of FM system SrRuO3, can be established and stabilized by the means of tensile epitaxial strain. Investigations on the…
Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by…
Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which…
Strain manipulation of the magnetic domains, such as the stripe domains and skyrmions, has attracted considerable attention because of its potential applications for magnetic logic and memory devices. Here, utilizing phase-field modeling,…
Single phase and strained LuMnO3 thin films are discovered to display co-existing ferromagnetic and antiferromagnetic orders. A large moment ferromagnetism (approx. 1 muB), which is absent in bulk samples, is shown to display a magnetic…
Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nano-electronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence,…