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The magnetic and transport properties of BiFeO3/La2NiMnO6 (BFO/LNMO) composite have been investigated both experimentally and theoretically. Unlike the normal rhombohedral (R3c) phase, BFO in the composites is crystallized in the triclinic…
Quantum memory is a key element for quantum repeaters and linear optical quantum computers. In addition to memory, repeaters and computers also require manipulating quantum states by means of unitary transformations, which is generally…
Multiferroic perovskites that exhibit room temperature magnetization and polarization have immense potential in the next generation of magneto-electric and spintronic memory devices. In this work, the magnetic and ferroelectric properties…
We demonstrate experimentally the creation and measurement of an entangled state between a microscopic two level system and a macroscopic superconducting resonator where their indirect interaction is mediated by an artificial atom, a…
By applying measurements of the dielectric constants and relative length changes to the dimerized molecular conductor $\kappa$-(BEDT-TTF)$_2$Hg(SCN)$_2$Cl, we provide evidence for order-disorder type electronic ferroelectricity which is…
We investigate ferroelectric- and resistive switching behavior in 18-nm-thick epitaxial BaTiO$_3$ (BTO) films in a model electrolyte-ferroelectric-semiconductor (EFS) configuration. The system is explored for its potential as a…
Superconducting electronics represents a promising technology, offering not only efficient integration with quantum computing systems, but also the potential for significant power reduction in high-performance computing. Nonetheless, the…
Ferroelectric perovskites have been ubiquitously applied in piezoelectric devices for decades, among which, eco-friendly lead-free (K,Na)NbO3-based materials have been recently demonstrated to be an excellent candidate for sustainable…
In many Ce-based superconductors, superconducting (SC) phases emerge or can be tuned in proximity to the antiferromagnetic (AF) quantum critical point (QCP), but so far the explicit phase evolution near the QCP lack theoretical…
Driven quantum systems exhibit a large variety of interesting and sometimes exotic phenomena. Of particular interest are driven conformal field theories (CFTs) which describe quantum many-body systems at criticality. In this paper, we…
Interfaces can differ from their parent compounds in terms of charge, spin, and orbital orders and are fertile ground for emergent phenomena, strongly correlated physics, and device applications. Here, we discover that ferroelectric order…
Over the last decade, memristive devices have been widely adopted in computing for various conventional and unconventional applications. While the integration density, memory property, and nonlinear characteristics have many benefits,…
Freestanding ferroelectric membranes are promising for flexible electronics, nonvolatile memory, photonics, and spintronics, but their synthesis is challenged by the need for reproducibility with precise stoichiometric control. Here, we…
Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device…
The interfacial behavior of quantum materials leads to emergent phenomena such as two dimensional electron gases, quantum phase transitions, and metastable functional phases. Probes for in situ and real time surface sensitive…
Superconducting 3D microwave cavities offer state-of-the-art coherence times and a well controlled environment for superconducting qubits. In order to realize at the same time fast readout and long-lived quantum information storage, one can…
Multiferroic oxides, such as BiFeO3, have garnered significant attention due to their coupled ferroelectric, magnetic, and elastic properties, offering exciting opportunities for multifunctional device applications. Controlling phase…
Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…
The transition to smart wearable and flexible optoelectronic devices communicating with each other and performing neuromorphic computing at the edge is a big goal in next-generation optoelectronics. These devices should perform their…
Conductive bridge random access memory devices such as Cu/SiO2/W are promising candidates for applications in neuromorphic computing due to their fast, low-voltage switching, multiple-conductance states, scalability, low off-current, and…