Related papers: Theory of strained quantum emitters
Twisted layers of atomically thin two-dimensional materials realize a broad range of novel quantum materials with engineered optical and transport phenomena arising from spin and valley degrees of freedom and strong electron correlations in…
We formulate a model for the steady state response of a nonlinear quantum oscillator structure, such as those used in a variety of superconducting qubit experiments, when excited by a steady, but not necessarily small, ac tone. We show that…
Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of…
Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-gap defect levels and states automatically lower the threshold…
Lattice mismatch in layered semiconductor structures with submicron length scales leads to extremely high nonuniform strains. This paper presents a finite element technique for incorporating the effects of the nonuniform strain into an…
A seemingly anomalous enhancement of electron mobility in strained silicon inversion layers at high sheet densities has exposed a conspicuous gap between device physics theory and experiment in recent years. We show that the root of this…
We have applied density-functional theory (DFT) based calculations to investigate the size and strain effects on the electronic properties, such as band structures, energy gaps, and effective masses of the electron and the hole, in Si…
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device…
We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit…
Electron spins are amongst the most coherent solid-state systems known, however, to be used in devices for quantum sensing and information processing applications, they must be typically placed near interfaces. Understanding and mitigating…
Phonons are considered to be universal quantum transducers due to their ability to couple to a wide variety of quantum systems. Among these systems, solid-state point defect spins are known for being long-lived optically accessible quantum…
Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defects are often placed in a nanostructured host or close to…
The spin of an electron in a semiconductor quantum dot represents a natural nanoscale solid state qubit. Coupling to nuclear spins leads to decoherence that limits the number of allowed quantum logic operations for this qubit. Traditional…
Vacancies in graphene lead to the appearance of localized electronic states with non-vanishing spin moments. Using a mean-field Hubbard model and an effective double-quantum dot description we investigate the influence of strain on…
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in…
Spin-to-photon interfaces from defects in silicon hold great promise towards realizing quantum repeaters with the combination of advanced semiconductor and photonics technologies. Recently, controlled creation and erasure of simple carbon…
Spin qubit defects in two-dimensional materials have a number of advantages over those in three-dimensional hosts including simpler technologies for the defect creation and control, as well as qubit accessibility. In this work, we select…
Color centers in hexagonal boron nitride (hBN) have recently emerged as promising candidates for a new wave of quantum applications. Thanks to hBN's high stability and 2-dimensional (2D) layered structure, color centers in hBN can serve as…
Uniaxial strain experiments have become a powerful tool to unveil the character of unconventional phases of electronic matter. Here we propose a combination of the superconducting fitness analysis and density functional theory (DFT)…
The unique quantum properties of the nitrogen-vacancy (NV) center in diamond have motivated efforts to find defects with similar properties in silicon carbide (SiC), which can extend the functionality of such systems not available to the…