Related papers: Modeling of a magnetic field sensor based on spin …
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…
The rapidly expanding class of quantum materials known as {\emph{topological semimetals}} (TSM) display unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for…
We propose a simple scheme for magnetic angular position sensor based on current-induced spin-orbit torque effect. A full range detection of 360o is realized with a pair of Hall crosses made of heavy metal/ferromagnet heterostructures. The…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…
The transverse magnetoresistance of the Bechgaard salt (TMTSF)$_2$PF$_6$ has been measured for various pressures, with the field up to 24 T parallel to the lowest conductivity direction c$^{\ast}$. A quadratic behavior is observed in the…
Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized…
We propose a novel concept of obtaining oscillations with frequencies in very-high frequency (VHF) and ultra-high frequency (UHF) bands. A traditional spin torque nano-oscillator (STNO) consists of at least one pinned layer (PL) and one…
Antiferromagnetic (AFM) spintronics, where magneto-transport is governed by an antiferromagnet instead of a ferromagnet, opens fascinating new perspectives for both fundamental research and device technology, owing to their intrinsic…
Pure spin currents hold promises for an energy-friendlier spintronics. They can be generated by a flow of charge along a non-magnetic metal having a large spin-orbit coupling. It produces a spin accumulation at its surfaces, controllable by…
We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the…
Surface-acoustic-wave (SAW) based devices have emerged as a promising technology in magnetic field sensing by integrating a magnetostrictive layer with the giant {\Delta}E/{\Delta}G effect. However, almost all SAW magnetic field sensors…
Many Heusler compounds are predicted to be ferromagnetic half metals in the bulk, which makes them promising compounds for spintronics. However, for devices the transport spin polarization at specific interfaces requires optimization. We…
The purpose of this article is to review the current status of a frontier in dynamic spintronics and contemporary magnetism, in which much progress has been made in the past decade, based on the creation of a variety of micro- and…
Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally…
A shapeable planar Hall sensor has been fabricated by lift-off a bilayer structure of NiFe(10 nm)/IrMn (8 nm) grown on a Kapton/PDMS substrate without using a buffer layer. The sensor exhibits a magnetic field sensitivity of 0.74…
Micron scale imaging of magnetic fields is an important tool for understanding the evolution of magnetism through phase transitions and as a result of interactions inside of heterostructures. However, most imaging platforms, like the…
The XXZ model on a square lattice in the presence of a transverse magnetic field is studied within the spin wave theory to investigate the resulting canted antiferromagnet. The small and large field regimes are probed separately both for…
Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice,…
Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…