Related papers: Quantitative models for excess carrier diffusion a…
A two-dimensional small bias model has been developed for a patterned metal current collector $|$ mixed oxygen ion and electronic conductor (MIEC) $|$ patterned metal current collector electrochemical cell in a symmetric gas environment.…
Scanning Transmission Electron Microscopy (STEM) offers high-resolution images that are used to quantify the nanoscale atomic structure and composition of materials and biological specimens. In many cases, however, the resolution is limited…
A simple model to describe Mixed Ionic Electronic Conductors (MIEC) in terms of standard semiconductor physics is described. This model allows to understand defect equilibrium and charge transport at ideal heterojunctions between materials…
We study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells (QWs) were experimentally…
A novel approach is presented to efficiently include transport effects in thin active material coating layers of all-solid-state batteries using a dimensionally reduced formulation embedded into a three-dimensionally resolved coupled…
Simulating the dynamics of charged particles in quasi-two-dimensional (quasi-2D) nanoconfined systems presents a significant computational challenge due to the long-range nature of electrostatic interactions and the geometric anisotropy. To…
The general theory for quantum simulation of cubic semiconductor n-MOSFETs is presented within the effective mass equation approach. The full three-dimensional transport problem is described in terms of coupled transverse subband modes…
This paper deals with simulation of flow and transport in porous media such as transport of groundwater contaminants. We first discuss how macro scale equations are derived and which terms have to be closed by models. The transport of…
We develop an analytical method for the processing of electron spin resonance (ESR) spectra. The goal is to obtain the distributions of trapped carriers over both their degree of localization and their binding energy in semiconductor…
In this work, a model to study the coupling between a semiconductor qubit and two timedependent electric fields is developed. By using it in the resonantly monochromatic double dressing regime, control of the local density of optical states…
The Calibration enhancement effort for the Space Telescope Imaging Spectrograph (STIS) aims to improve data calibration via the application of physical modelling techniques. We describe here a model of the Charge Transfer process during…
This work presents a Bayesian algorithm to fit the recombination and collisionally excited line spectra of gas photoionized by clusters of young stars. The current model consists in fourteen dimensions: two electron temperatures, one…
Excitons are bound electron-hole pairs that dominate the optical response of semiconductors and insulators, especially in materials where the Coulomb interaction is weakly screened. Light absorption (including excitonic effects) has been…
We report the transport characteristics of both electrons and holes through narrow constricted crystalline Si "wall-like" long-channels that were surrounded by a thermally grown SiO2 layer. Importantly, as a result of the existence of fixed…
A simple lattice model describing the recombination dynamics in visible light emitting porous Silicon is presented. In the model, each occupied lattice site represents a Si crystal of nanometer size. The disordered structure of porous…
A simulation framework that couples atomistic electronic structures to Boltzmann transport formalism is developed and applied to calculate the transport characteristics of thin silicon nanowires (NWs) up to 12nm in diameter. The…
We propose a novel centrality definition-independent method for analyzing higher-order cumulants, specifically addressing the challenge of volume fluctuations that dominate in low-energy heavy-ion collisions. This method reconstructs…
We investigate electron transport across a complex oxide heterointerface of La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) on Nb:SrTiO$_3$ (Nb:STO) at different temperatures. For this, we employ the conventional current-voltage method as well as the…
The total rate of carrier recombination in semiconductors has conventionally been expressed using an additive model, r_total = \Sigma r_i , which rules out the interactions between carrier recombination pathways. Here we challenge this…
The present work revisits the recombination velocities ($s_{\mathrm{GB}}$) of minority-charge carriers determined at grain boundaries in polycrystalline absorber materials for solar cells. The equations describing $s_{\mathrm{GB}}$ as well…