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Two-dimensional electron systems found at the interface of SrTiO3-based oxide heterostructures often display anisotropic electric transport whose origin is currently under debate. To characterize transport along specific crystallographic…
We study properties of gravitational waves based on the three-dimensional simulations, which demonstrate the neutrino-driven explosions aided by the standing accretion shock instability (SASI). Pushed by evidence supporting slow rotation…
Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resistance and many more. To form shallow junctions in Ge is a…
The question of optical bandgap anisotropy in the monoclinic semiconductor $\beta$-Ga2O3 was revisited by combining accurate optical absorption measurements with theoretical analysis, performed using different advanced computation methods.…
The quasi-two-dimensional molecular semimetallic conductor $\alpha$-STF$_2$I$_3$ is isostructural with $\alpha$-ET$_2$I$_3$.The latter possesses a unique band structure showing a zero-gap state with Dirac cones under high pressure, whereas…
We performed a measurement of the ionization response of 200 $\mu$m-thick amorphous selenium (aSe) layers under drift electric fields of up to 50 V/$\mu$m. The aSe target was exposed to ionizing radiation from a $^{57}$Co radioactive source…
Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the…
We have investigated the electronic structure of nano-sized iron oxide by scanning tunnelling microscopy (STM) and spectroscopy (STS) as well as by photoelectron spectroscopy. Nano particles were produced by thermal treatment of Ferritin…
Ion beam irradiation of semiconductors is a method to produce regular periodic nanoscale patterns self-organized on wafer scale. At low temperatures, the surface of semiconductors is typically amorphized by the ion beam. Above a material…
Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi…
This paper examines the transition from isotropic to anisotropic beam profiles in a linear focusing channel. Considering a high-intensity ion beam in space-charge dominated regime and large mismatched {\it RMS} beam size initially, observe…
The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and…
Broken symmetries in graphene affect the massless nature of its charge carriers. We present an analysis of scattering by defects in graphene in the presence of spin-orbit interactions (SOIs). A characteristic constant ratio ($\simeq 2$) of…
Recent molecular dynamic simulations have found chiral single wall carbon nanotubes (SWNTs) twist during stretching, which is similar to the motion of a screw. Obviously this phenomenon, as a type of curvature-chirality effect, can not be…
Spontaneous rotational-symmetry breaking in the superconducting state of doped $\mathrm{Bi}_2\mathrm{Se}_3$ has attracted significant attention as an indicator for topological superconductivity. In this paper, high-resolution calorimetry of…
Since an ion-beam is a viable attractive alternative to other material surface patterning techniques like an electron-beam, a study of the structure, composition and dimension of patterned lines created on surfaces of Si and SrTiO3 wafers…
Crystal orientation and strain mapping of an individual curved and asymmetrical core-shell hetero-nanowire is performed based on transmission electron microscopy. It relies on a comprehensive analysis of scanning nanobeam electron…
This study investigates the anomalous orbital effects in iron (Fe) films with strong uniaxial anisotropy, highlighting the interactions between spin and orbital currents. Using heterogeneous YIG/Fe and YIG/Pt/Fe structures, fabricated by…
We report on a nanoscale patterning method on Si substrates using self-assembled metal islands and low-energy ion-beam irradiation. The Si nanostructures produced on the Si substrate have a one-to-one correspondence with the self-assembled…
Rearrangement of atoms due to broken translational symmetries at the surface of SrTiO$_3$ is scarcely debatable in the present day scenario. Actual concern demands to unveil the true structure and precise mechanism responsible for atomic…