Related papers: Re-evaluating photoluminescent defects in Cu$_2$O
The article describes an experimental method that allows to estimate the inhomogeneous and homogeneous linewidths of the photoluminescence band of a point defect in an amorphous solid. We performed low temperature time-resolved luminescence…
Electromagnetic topological insulators have been explored extensively due to the robust edge states they support. In this work, we propose a topological electromagnetic system based on a line defect in topologically nontrivial photonic…
The tailored optical properties of $(In_xGa_{1-x})_2O_3$ microcrystalline films were studied as a function of composition x via transmission, Urbach energy analysis, and spatial photoluminescence (PL) mapping of the self-trapped hole (STH)…
The photonic density of states (PDS) of eigen polarizations (EPs) in cholesteric liquid crystal (CLC) cells with a defect layer inside are calculated. The dependences for the PDS and light intensity in the defect layer on the parameters…
We present evidence that band gap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu$_2$ZnSnS$_4$/CdS solar cells. Band gap narrowing is caused by surface states that extend the…
CuInS2 quantum dots have been studied in a broad range of applications, but despite this, the fine details of their charge carrier dynamics remain a subject of intense debate. Two of the most relevant points of discussion are the hole…
We investigate native point defects and rare-earth (co)dopants in SrAl$_2$O$_4$ using hybrid density-functional defect calculations. Europium (Eu) and dysprosium (Dy) are found to be mixed valence and energetically most favorable at the Sr…
Monolayer MoS$_2$ has emerged as an interesting material for nanoelectronic and optoelectronic devices. The effect of substrate screening and defects on the electronic structure of MoS$_2$ are important considerations in the design of such…
Defects are inevitably present in two-dimensional (2D) materials and usually govern their various properties. Here a comprehensive density functional theory-based investigation of 7 kinds of point defects in a recently produced {\gamma}…
By creating defects via oxygen plasma treatment, we demonstrate optical properties variation of single-layer MoS2. We found that, with increasing plasma exposure time, the photoluminescence (PL) evolves from very high intensity to complete…
We have found a quantitative connection between the evolution of the inhomogeneous nanoscale electronic gaps (INSEG) state detected in Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ by scanning tunneling microscopy/spectroscopy (STM/S) and the two…
Intrinsic and extrinsic disorder from lattice imperfections, substrate and environment has a strong effect on the local electronic structure and hence the optical properties of atomically thin transition metal dichalcogenides that are…
The electronic structure, linear and nonlinear optical properties have been calculated for CuInX2 (X=S, Se, Te) chalcopyrite-structure single crystals using the state-of-the-art full potential linear augmented plane wave (FP-LAPW) method.…
We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…
Composite oxides have been indeed proved to be valuable materials in optoelectronic applications. The combination of indium oxide and gallium oxide and other materials can lead to enhanced optical and electronic properties, making them…
Achieving efficient and stable ultraviolet emission is a challenging goal in optoelectronic devices. Herein, we investigate the UV luminescence of zinc germanate Zn2GeO4 microwires by means of photoluminescence measurements as a function of…
The low temperature physics of structurally amorphous materials is governed by two-level system defects (TLS), the exact origin and nature of which remain elusive despite decades of study. Recent advances towards realising stable…
Gallium oxide (b-Ga2O3) is a wide-bandgap compound semiconductor with a bandgap of ~ 4.9 eV that is currently considered promising for a wide range of applications ranging from transparent conducting electrodes to UV optoelectronic devices…
The correlated-band theory implemented as a combination of the local-density approximation with the dynamical mean-field theory is applied to PuO2. An insulating electronic structure, consistent with the experimental valence-band…
Calculations of formation energies and charge transition levels of defects routinely rely on density functional theory (DFT) for describing the electronic structure. Since bulk band gaps of semiconductors and insulators are not well…