Related papers: Jamming-controlled stochasticity in metal-insulato…
Quantum materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take…
Memory effects during metal-insulator transitions in quantum materials reveal complex physics and potential for novel electronics mimicking biological neural systems. Nonetheless, understanding of memory and nonlinearity in sequential…
Achieving the full understanding and control of the insulator-to-metal transition in Mott materials is key for the next generation of electronics devices, with applications ranging from ultrafast transistors, volatile and non-volatile…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends…
Experimental insight in the nanoscale dynamics underlying switching in novel memristive devices is limited owing to the scarcity of techniques that can probe the electronic structure of these devices. Scattering scanning near-field optical…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
Spatial phase inhomogeneity at the nano- to microscale is widely observed in strongly-correlated electron materials. The underlying mechanism and possibility of artificially controlling the phase inhomogeneity are still open questions of…
Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries…
Artificial neural networks can harness stochasticity in multiple ways to enable a vast class of computationally powerful models. Electronic implementation of such stochastic networks is currently limited to addition of algorithmic noise to…
Replicating the computational functionalities and performances of the brain remains one of the biggest challenges for the future of information and communication technologies. Such an ambitious goal requires research efforts from the…
Introducing foreign ions, atoms, or molecules into emerging functional materials is crucial for manipulating material physical properties and innovating device applications. The intercalation of emerging new materials can induce multiple…
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but there still lacks a rational physical basis to be relied on to design scalable…
Electrically driven insulator-metal transitions in prototypical quantum materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V: O stoichiometry offers a vast electronic phase space with…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations…
Controlled disorder in correlated materials provides a new route to emergent stochastic dynamics in neuromorphic hardware. Here we show that focused ion beam irradiation in VO$_{2}$- and V$_{2}$O$_{3}$-based resistive-switching oscillators…
Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated…
Design of hardware based on biological principles of neuronal computation and plasticity in the brain is a leading approach to realizing energy- and sample-efficient artificial intelligence and learning machines. An important factor in…
Volatile threshold resistive switching and neuronal oscillations in phase-change materials, specifically those undergoing metal-to-insulator transitions, offer unique attributes such as fast and low-field volatile switching, tunability, and…