Related papers: Microscopic Origin of Polarization-Controlled Magn…
Magnetization reversal in ferro- and ferrimagnets is a well-known archetype of non-equilibrium processes, where the volume fractions of the oppositely magnetized domains vary and perfectly compensate each other at the coercive magnetic…
A current challenge in the field of magnetoelectric multiferroics is to identify systems that allow a controlled tuning of states displaying distinct magnetoelectric responses. Here we show that the multiferroic ground state of the…
We report a strain-controlled tuning of magnetism in transition-metal-atom-decorated graphene. Our first-principles calculations demonstrate that strain can lead to a sudden change in the magnetic configuration of a transition metal (TM)…
In this work we use a phenomenological theory of ferroelectric switching in BiFeO$_3$ thin films to uncover the mechanism of the two-step process that leads to the reversal of the weak magnetization of these materials. First, we introduce a…
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of…
In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic sub-systems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work…
In 3d-electron magnetic systems, the magnetic structures that transform each other by spin rotation have very close degenerate energies due to small spin-orbit coupling and can be easily controlled by chemical substitution and external…
The interaction between superconductivity and ferromagnetism in thin film superconductor/ferromagnet heterostructures is usually reflected by a change in superconductivity of the S layer set by the magnetic state of the F layers. Here we…
We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (3T-MTJs) with in-plane magnetization. Utilizing fast pulse…
Magnetization reversal of soft ferromagnetic Fe layer, coupled to [Co/Pt]ML multilayer [ML] with perpendicular magnetic anisotropy (PMA), has been studied in-situ with an aim to understand the origin of exchange bias (EB) in orthogonal…
A major challenge in spin-based electronics is reducing power consumption for magnetization switching of ferromagnets, which is being implemented by injecting a large spin-polarized current. The alternative approach is to control the…
Perpendicular exchange bias (EB), which combines the perpendicular magnetic anisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchange coupling, is extremely important in the high-density AFM spintronics. However, the…
Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in…
Our results describe an unprecedented example of change in the mechanism of magnetically-induced electric polarization from spin current to spin-dependent p-d hybridization model. We have followed the evolution of the magnetic structures of…
When electric and magnetic fields are applied together on a magnetoelectric antiferromagnet, the domain state is subject to reversal. Although the initial and final conditions are saturated single-domain states, the process of reversal may…
Assessing and controlling magnetic interactions in magnetic nanostructures are critical to nanomagnetic and spintronic explorations, such as magnetic recording media, permanent magnets, magnetic memory and logic devices, etc. Here we…
We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric…
The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show large discrepancy with experiments in studying the spin-orbit torque switching of…
Strong magnetic field pulses associated with a relativistic electron bunch can imprint switching patterns in magnetic thin films that have uniaxial in-plane anisotropy. In experiments with Fe and FeCo alloy films the pattern shape reveals…
Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables…