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Related papers: Understanding Interface Stability in RENi2/Ni thro…

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Epitaxial strain energies of epitaxial films and bulk superlattices are studied via first-principles total energy calculations using the local-density approximation. Anharmonic effects due to large lattice mismatch, beyond the reach of the…

Materials Science · Physics 2009-10-30 V. Ozolins , C. Wolverton , Alex Zunger

The question of stability against diffusional mixing at the prototypical LaAlO3/SrTiO3(001) interface is explored using a multi-faceted experimental and theoretical approach. We combine analytical methods with a range of sensitivities to…

The existence and the regularity results obtained in [37] for the variational model introduced in [36] to study the optimal shape of crystalline materials in the setting of stress-driven rearrangement instabilities (SDRI) are extended from…

Analysis of PDEs · Mathematics 2026-01-29 Shokhrukh Kholmatov , Paolo Piovano

In our recent experimental work (Appl. Phys. Lett. 125, 122109 (2024)), we observed that crystalline Si$_3$N$_4$ cap layers a few nanometers thick can form in situ on GaN surfaces. Compared with amorphous SiO$_2$ and Al$_2$O$_3$ caps, these…

Materials Science · Physics 2025-12-22 Xin Chen , Xin Luo , Duo Wang , Xu Cheng , Peng Cui

In the presented research, the intergranular elastic interaction and the second-order plastic incompatibility stress in textured ferritic and austenitic steels were investigated by means of diffraction. The lattice strains were measured…

Using first principles, classical potentials, and elasticity theory, we investigated the structure of a semiconductor/semiconductor interface with a high lattice mismatch, SiC/Si(001). Among several tested possible configurations, a…

Materials Science · Physics 2007-09-12 Laurent Pizzagalli , Giancarlo Cicero , Alessandra Catellani

Using the density functional theory (DFT) formulated within the framework of the plane-wave basis projector augmented wave (PAW) method, the temperature-dependent elastic properties of MgRE (RE=Y, Dy, Pr, Sc, Tb) intermetallics with B2-type…

Materials Science · Physics 2015-05-28 Rui Wang , Shaofeng Wang , Yin Yao

Heteroepitaxy conventionally relies on rigid crystalline substrates, implicitly assuming that lattice and thermal mismatch must be accommodated within the epitaxial layer, leading to residual strain and defects that worsen with increasing…

An intrinsic feature of nearly all internal interfaces in crystalline systems (homo- and hetero-phase) is the presence of disconnections (topological line defects constrained to the interface that have both step and dislocation character).…

Materials Science · Physics 2023-05-12 Caihao Qiu , Marco Salvalaglio , David J. Srolovitz , Jian Han

In recent years, functional oxide-metal based vertically aligned nanocomposite (VAN) thin films have gained interest due to their intriguing physical properties and multifunctionalities stemming from the complex interactions between the two…

Materials Science · Physics 2021-12-20 Kyle Starkey , Ahmad Ahmad , Juanjuan Lu , Haiyan Wang , Anter El-Azab

Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impact of interfacial oxygen concentration on the MoS2/HfO2…

Materials Science · Physics 2014-02-10 Santosh KC , Roberto C. Longo , Robert M. Wallace , Kyeongjae Cho

Using Molecular Dynamics (MD) and Monte Carlo (MC) simulations interfacial properties of crystal-fluid interfaces are investigated for the hard sphere system and the one-component metallic system Ni (the latter modeled by a potential of the…

Materials Science · Physics 2015-05-13 T. Zykova-Timan , R. E. Rozas , J. Horbach , K. Binder

Heterogeneous interfaces are central to many energy-related applications in the nanoscale. From the first-principles electronic structure perspective, one of the outstanding problems is accurately and efficiently calculating how the…

Materials Science · Physics 2023-08-29 Zhen-Fei Liu

Interlayer coupling in two-dimensional (2D) layered nanomaterials can provide us novel strategies to evoke their superior properties, such as the exotic flat bands and unconventional superconductivity of twisted layers, the formation of…

Here we report the evolution of Ni stress in electroplated Ni films and investigate its origins as a function of electroplating time. First, low stress 200-nm-thick Ti / 200-nm thick Ni seed layers are deposited onto Si (100) wafers via…

Applied Physics · Physics 2019-03-11 Y. Yao , C. Bayram

Friction dissipates a substantial portion of global energy, motivating the pursuit of superlubricity, a state of near-zero friction, in real-world systems. Conventional approaches rely on crystalline lattice mismatch to suppress periodic…

Materials Science · Physics 2026-03-17 Wan Wang , Zijun Ding , Panpan Li , Wanying Ying , Hongxuan Li , Xiaohong Liu , Huidi Zhou , Jianmin Chen , Wengen Ouyang , Li Ji

Employing the first-principles computations based on the density functional theory (DFT), we have investigated the structural, mechanical, electronic, bonding, optical and thermodynamics properties of newly discovered bulk superconductors…

Materials Science · Physics 2018-02-01 Md. Atikur Rahman , Md. Zahidur Rahaman , Md. Lokman Ali , Md. Shahjahan Ali

Although Ti2N and Ti belong to different crystal systems and Bravais lattices, we show that N intercalation in Hexagonal Close-Packed (HCP) Ti can lead to the formation of Ti2N by diffusionless displacement of Ti atoms, which is a…

Materials Science · Physics 2024-10-15 J. Varalakshmi , Satyesh Kumar Yadav

Topographical and diffuse interface reconfigurations occur with a change in the solidification rate. In this article we pursue the hypothesis that the interface configuration during solidification is determined by the rate of entropy…

Materials Science · Physics 2017-02-14 Yaw Delali Bensah , J. A. Sekhar

The strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface. We present a…

Materials Science · Physics 2008-02-03 Fabio Bernardini , Vincenzo Fiorentin , David Vanderbilt