Related papers: Resistive-Switching Dynamics in Poly(3-hexylthioph…
We present a quantitative analysis of the steady state electronic transport in a resistive switching device. The device is composed of a thin film of Ag$_{2}$S (solid electrolyte) contacted by a Pt nano-contact acting as ion-blocking…
Organic Electrochemical Transistors are considered today as a key technology to interact with biological medium through their intrinsic ionic-electronic coupling. In this paper, we show how this coupling can be finely tuned (in operando)…
High-entropy oxides (HEOs) are a promising class of multicomponent ceramics with tunable structural and electronic properties. In this study, we investigate the local electronic structure of rare-earth HEOs in the (Ce, Sm, Pr, La, Y)O2…
We present resonant x-ray emission spectroscopic (RXES) data from the uranium intermetallics UPd$_3$, USb, USn$_3$ and URu$_2$Si$_2$, at the U $M_{4,5}$ edges and compare the data to those from the well-localized $5f^2$ semiconductor…
We review theories of phosphorescence in cyclometalated complexes. We focus primarily on pseudooctahedrally coordinated $t_{2g}^6$ metals (e.g., [Os(II)(bpy)$_3$]$^{2+}$, Ir(III)(ppy)$_3$ and Ir(III)(ptz)$_3$) as, for reasons that are…
Resistive switching (RS) devices, based on soft materials such as organic, biomolecules as well as natural plant extracts etc., has emerged as a promising alternative to the conventional memory technologies. They offer simple device…
We investigate ferroelectric- and resistive switching behavior in 18-nm-thick epitaxial BaTiO$_3$ (BTO) films in a model electrolyte-ferroelectric-semiconductor (EFS) configuration. The system is explored for its potential as a…
The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control…
Using d. functional theory (DFT) computations, the authors demonstrated a substantial skeletal relaxation when the structure of 2,5-bis-[4-anthracene-9-yl-phenyl]-1,1-dimethyl-3,4-diphenyl-silole (BAS) is optimized in the gas-phase…
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling…
Basing on 2D computer simulation of physical processes in high-voltage reversibly-switched dynistors (RSD) important peculiarities of their submicrosecond pulse performance mechanisms have been studied. It is characteristic that on early…
Intelligent reflecting surfaces (IRSs) have attracted considerable attention because of their ability to dynamically control electromagnetic wave propagation. While most existing IRSs have been developed for low-power communication and…
This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study successfully attains four distinct and stable resistance…
Structural, magnetic and electrical-transport properties of {\alpha}-LiFeO2, crystallizing in the rock salt structure with random distribution of Li and Fe ions, have been studied by synchrotron X-ray diffraction, 57Fe M\"ossbauer…
Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^{\gamma}$…
The mechanism of resistive switching in two-dimensional (2D) semiconductor-based memristors is intriguing, and our conventional knowledge of bulk-oxide based memristors does not apply to these devices. Experimental data indicate that the…
We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy…
Polyborosiloxane (PBS) is an important rate-stiffening soft polymer with dynamic, reversible crosslinks used in applications ranging from self-healing sensing and actuation to body and structural protection. Its highly rate-dependent…
We have presented the structural, elastic, optoelectronic and transport properties of Sr3SnO under pressure by using first principles method. The application of hydrostatic pressure causes charge transfer from Sr(5s) orbital to Sn(5p) and…
Using metal-ferroelectric junctions as switchable diodes was proposed several decades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom et al. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reported…