Related papers: Tunable Edelstein effect in intrinsic two-dimensio…
Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging…
The realization of multiferroicity in 2D nanomaterials is crucially important for designing advanced nanoelectronic devices such as non-volatile multistate data storage. In this work, the coexistence of ferromagnetism and ferroelectricity…
The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent…
Nonlinear spintronics combines nonlinear dynamics with spintronics, opening up new possibilities beyond linear responses. A recent theoretical work [Xiao et al., Phys. Rev. Lett. 130, 166302 (2023)] predicts the nonlinear generation of spin…
Altermagnets host unconventional spin-polarized bands despite zero net magnetization, but controlling their spin structure remains challenging. We propose a multi-field approach to engineer spin polarization in $d$-wave altermagnets using…
A domain wall (DW) which moves parallel to a magnetically compensated interface between an antiferromagnetic insulator (AFMI) and a two-dimensional (2D) metal can pump spin polarization into the metal. It is assumed that localized spins of…
Materials with reduced dimensions have been shown to host a wide variety of exotic properties and novel quantum states that often defy textbook wisdom1-5. Ferroelectric polarization and metallicity are well-known examples of mutually…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…
Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including…
The coexistence of metallicity and ferroelectricity has been an intriguing and controversial phenomenon as these two material properties are considered incompatible in bulk. We clarify the concept of ferroelectric metal by revisiting the…
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…
Spin-polarized two-dimensional electron gas (2DEG) at oxide interfaces is an emerging physical phenomenon, which is technologically important for potential device applications. However, most previous relevant studies only focused on the…
Superconducting diode effect (SDE) with nonreciprocal supercurrent transport has attracted intense attention recently, not only for its intriguing physics, but also for its great application potential in superconducting circuits. It is…
The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through…
We self-consistently calculate the supercurrent diode effect from microscopic models of quasi one- and two-dimensional clean superconductors with spin-orbit coupling under external Zeeman fields, and show that the Edelstein effect is…
Half-metallic half-Heusler compounds with strong spin-orbit-coupling and broken inversion symmetry in their crystal structure are promising materials for generating and absorbing spin-currents, thus enabling the electric manipulation of…
Chiral semiconductors such as elemental tellurium (Te) exhibit unconventional spin textures and large charge-to-spin conversion efficiencies, yet the influence of introducing elements on these properties remains underexplored. Here, we…
Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is…
In-plane magnetization is induced by the Edelstein effect in the Rashba spin-orbit interaction system. However, out-of-plane magnetization is more useful for switching a ferromagnetic memory. We study analytically and numerically…
The surface states of three-dimensional topological insulators posses the unique property of spin-momentum interlocking. This property gives rise to the interesting inverse Edelstein effect (IEE), in which an applied spin bias $\mu$ is…