Related papers: Quantum Hall Effect at 0.002T
The discovery of the fractional quantum Hall effect in GaAs-based semiconductor devices has lead to new advances in condensed matter physics, in particular the possibility for exotic, topological phases of matter that possess fractional,…
We have measured the quantum Hall effect in monolayer graphene samples that were exposed to a cold hydrogen plasma leading to a hydrogenation level of a few percent. Compared to pristine graphene, the Landau level distance significantly…
Flat band moir\'e graphene systems have emerged as a quintessential platform to investigate correlated phases of matter. A plethora of interaction-driven ground states have been proposed, and yet despite extensive experimental effort, there…
We present a microscopic theory to give a physical picture of the formation of quantum anomalous Hall (QAH) effect in graphene due to a joint effect of Rashba spin-orbit coupling $\lambda_R$ and exchange field $M$. Based on a continuum…
The effect of an inhomogeneous magnetic field which varies inversely as distance on the ground state energy level of graphene is studied. In this work, we analytically show that graphene under the influence of a magnetic field arising from…
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…
The reason why the half-integer quantum Hall effect (QHE) is suppressed in graphene grown by chemical vapor deposition (CVD) is unclear. We propose that it might be connected to extended defects in the material and present results for the…
The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport…
Single layer core/shell structures consisting of graphene as core and hexagonal boron nitride as shell are studied using first-principles plane wave method within density functional theory. Electronic energy level structure is analysed as a…
We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to…
The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…
We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic…
We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate…
We investigate new properties of the Dirac electrons in the finite graphene sample under perpendicular magnetic field that emerge when an in-plane electric bias is also applied. The numerical analysis of the Hofstadter spectrum and of the…
Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Here, we reveal a universal connection between graphene's…
We calculate the carrier density dependent ground state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects non-perturbatively on an equal footing in a…
In this paper, we develop a unified theory for describing Hall effect in various electronic systems based on a pure electron picture (without the hole concept). We argue that the Hall effect is the magnetic field induced symmetry breaking…
The nature of fractional quantum Hall (FQH) states is determined by the interplay between the Coulomb interaction and the symmetries of the system. The unique combination of spin, valley, and orbital degeneracies in bilayer graphene is…
Quantum Hall edge states offer avenues for quasiparticle interferometry, provided that the ratio between phase coherence length and quantum Hall interferometer (QHI) size is large enough. Maximizing this ratio by shrinking the QHI area…
The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder, and…