Related papers: Exceptionally High Carrier Mobility in Hexagonal D…
The influence of external magnetic field $h$ on a static conductivity of Mott-Hubbard material which is described by model with correlated hopping of electrons has been investigated. By means of canonical transformation the effective…
Bilayers of two-dimensional materials twisted at specific angles can exhibit exceptional properties such as the occurrence of unconventional superconductivity in twisted graphene. We demonstrate here that novel phenomena in twisted…
We present a thorough dielectric investigation of the hexagonal perovskites La1.2Sr2.7IrO7.33 and La1.2Sr2.7RuO7.33 in a broad frequency and temperature range, supplemented by additional infrared measurements. The occurrence of giant…
High-performance $p$-type transparent conducting materials (TCMs) must exhibit a rare combination of properties including high mobility, transparency and $p$-type dopability. The development of high-mobility/conductivity $p$-type TCMs is…
Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical…
A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (hBN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals. A high quantum yield…
By using density functional theory, we have studied vibrational features, Raman activities, and electronic properties of ultrathin hydrogen-passivated diamond nanowires (H-DNWs). Confinement imposes the softening of transverse acoustic…
Germanane (GeH) is essentially a hydrogen-terminated Ge analog of graphene with a direct gap (~1.6 eV). Record hole mobility mu_h~67,000 cm2/Vs is found at 15 K for a single allotropic cross-dimensional(D) heterointerface. This is enabled…
Superconductivity above 25K, and possibly above 40K, has recently been discovered in $LaO_{1-x}F_xFeAs$ and related compounds. We propose that this is another example of the mechanism of hole superconductivity at play. This requires the…
Layered materials have uncommonly anisotropic thermal properties due to their strong in-plane covalent bonds and weak out-of-plane van der Waals interactions. Here we examine heat flow in graphene (graphite), h-BN, MoS2, and WS2 monolayers…
We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at…
We derive an analytical expression for the longitudinal magnetoconductivity $\sigma_{zz}$ in layered conductors in presence of a quantizing magnetic field perpendicular to the layers and for short-range in-plane impurity scattering in frame…
The integration of high-thermal-conductivity diamond films onto silicon carbide (SiC) substrates offers a promising pathway for thermal management in high-power electronic devices. Here, we investigate the depth-dependent thermal…
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa…
We study electron correlation driven superconductivity on a decorated honeycomb lattice (DHL), which has a low-energy flat band. On doping, we find singlet superconductivity with extended-s, extended-d and f-wave symmetry mediated by…
The Moore's law in the semiconducting industry has faltered as the three-dimensional (3D) Si-based transistors has approached their physical limit with the downscaling. The carrier mobility $\rm \mu $, critical to the device's performance,…
The infrared optical conductivity of intermediate valence compound TmSe reveals clear signatures for hybridization of light $d$- and heavy f-electronic states with m* ~ 1.6 m_0 and m* ~ 16 m_0, respectively. At moderate and high…
The transport properties of hot holes in silicon at cryogenic temperatures exhibit several anomalous features, including the emergence of two distinct saturated drift velocity regimes and a non-monotonic trend of the current noise versus…
Strontium titanate is a wide-gap semiconductor avoiding a ferroelectric instability thanks to quantum fluctuations. This proximity leads to strong screening of static Coulomb interaction and paves the way for the emergence of a very dilute…
Kagome materials have recently drawn great attention due to the interplay between nontrivial band topology, electron correlations, and Van Hove singularities related many-body orders. Here we report three new vanadium-based kagome metals,…