Related papers: Resolving the band alignment of InAs/InAsSb mid-wa…
We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified…
We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band $\mathbf{k} \cdot \mathbf{p}$ Hamiltonian to…
Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due to their excellent photoelectric properties and flexible and adjustable band structures. Among these compounds, InAs/GaSb…
Ternary-based InAs/InAs1-xSbx Strained-Layer Superlattice (SLS)material with type-II band alignment belongs to the 6.1 A family with reasonably small lattice mismatch with GaSb substrate for epitaxial growth. InAs/InAs1-xSbx SLS have been…
By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self…
We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb_(0.5)As_(0.5). This alloy part of the heterostructures is a topological semimetal. The other component of…
We have used an eight band model to investigate the electronic structures and to calculate the optical matrix elements of InAs-GaSb broken gap semiconductor heterostructures. The unusual hybridization of the conduction band states in InAs…
This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain of the InAs layers, two different shutter sequences have been…
A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the…
In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and…
Heterostructures including the members of the 6.1{\AA} semiconductor family (AlSb, GaSb, and InAs) are used in infrared optoelectronic devices as well as a variety of other applications. Short-period superlattices of these materials are…
We have studied a 50/50\AA superlattice of GaAs/Al$_{0.21}$Ga$_{0.79}$As composition, modulation-doped with Si, to produce $n=1.4\times 10^{12}$ cm$^{-2}$ electrons per superlattice period. The modulation-doping was tailored to avoid the…
The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates…
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the…
We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching…
Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive…
The demand for fast mid-wave infrared photodetectors is fueled by high-rate free-space optical communication and optical frequency comb spectroscopy. To date, only a few multi-GHz photodetectors have shown sensitive room-temperature…
We present analytical and numerical study of photonic lattice with short- and long-range harmonic modulations of the refractive index. Such structures can be prepared experimentally with holographic photolithography. In the spectral region…
We have performed ultrafast pump-probe spectroscopy studies on a series of InAs/GaSb-based short-period superlattice (SL) samples with periods ranging from 46 \AA to 71 \AA. We observe two types of oscillations in the differential…
While advancing a physics-based comprehensive photodetector-simulation model, we propose a novel device design of the mid-wavelength infrared nBn photodetectors by exploiting the inherit flexibility of the $InAs_{1-x}Sb_{x}$ ternary alloy…