Related papers: Correlation-driven branch in doped excitonic insul…
We explore higher order topological superconductivity in an artificial Dirac material with intrinsic spin-orbit coupling, which is a doped $\mathbb{Z}_2$ topological insulator in the normal state. A mechanism for superconductivity due to…
The stripe phases found in correlated oxides can be viewed as an ordering of the solitons associated with doping the Mott-insulating state. Inspired by the recent observation that the stripes tilt away from the main axis of the crystal…
A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…
Excitonic spectra are calculated for free-standing, surface passivated InAs quantum dots using atomic pseudopotentials for the single-particle states and screened Coulomb interactions for the two-body terms. We present an analysis of the…
We present a general formulation to calculate the dynamic optical conductivity, beyond the linear response regime, of any electronic system whose quasiparticle dispersion is described by a two band model. Our phenomenological model is based…
Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted many research attentions. There were many theoretical works using different…
We study the doping evolution of spin excitations in a 1D Hubbard model and its downfolded spin Hamiltonians, by using exact diagonalization combined with cluster perturbation theory. In all models, we observe hardening (softening) of spin…
We investigated proximity-induced superconductivity in a graphene-insulating InO bilayer system through gate-controlled transport measurements. Distinct oscillations in the differential conductance are observed across both the electron and…
We study low-energy magnetic excitations of doped spin-ladders, based on an effective Hamiltonian describing interactions of mobile spin and background spins. The helicity modulus against fluctuations in the ladder plane as well as…
Electrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The junction exhibits rectifying current-voltage…
Doping dependence of the spin fluctuations and the electron correlations in the effective five-band Hubbard model for iron pnictides is investigated using the fluctuation-exchange approximation. For a moderate hole doping, we find a…
Within the framework of the kinetic energy driven superconducting mechanism, the doping dependence of the electromagnetic response in the electron-doped cuprate superconductors is studied. It is shown that although there is an electron-hole…
Transport of charge carriers can be controlled by doping through chemical and physical means. Unlike chemical doping, physical doping is carried out by a special technique through gate voltages in a field-effect transistor geometry. This…
Motivated by the gigantic nonlinear optical response in the halogen-bridged Ni-compounds, the underlying electronic states of the compounds are examined in the one-dimensional two-band Hubbard model, by studying the current-current…
We study the correlated electronic structure of single-layer iridates based on structurally-undistorted Ba$_2$IrO$_4$. Starting from the first-principles band structure, the interplay between local Coulomb interactions and spin-orbit…
In the framework of dynamical mean field theory (DMFT) we analyze Hall effect in doped Mott insulator as a parent cuprate superconductor. We consider the partial filling (hole doping) of the lower Hubbard band and calculate the dependence…
We investigate the formation of charge domain walls in an electron-doped extended Hubbard model for the superconducting cuprates. Within an unrestricted Hartree-Fock approach, extended by the introduction of slave-bosons to obtain a more…
Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…
Using functional renormalization group we investigated possible superconductivity in doped Sr$_2$IrO$_4$. In the electron doped case, a $d^*_{x^2-y^2}$-wave superconducting phase is found in a narrow doping region. The pairing is driven by…
We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples…