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Bismuth selenide Bi$_2$Se$_3$ was grown by molecular beam epitaxy while carrier density and mobility were measured directly \emph{in situ} as a function of film thickness. Carrier density shows high interface n-doping (1.5 x 10$^{13}$…
Thermoelectric energy conversion is an attractive technology for generating electricity from waste heat and using electricity for solid-state cooling. However, conventional manufacturing processes for thermoelectric devices are costly and…
Homogeneous highly epitaxial LaSrMnO3 (LSMO) thin films have been grown on Yttria-stabilized-Zirconia (YsZ) / CeO2 buffer layers on technological relevant 4" silicon wafers using a Twente Solid State Technology B.V. (TSST) developed large…
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…
Chalcogenide-based optical phase change materials (OPCMs) exhibit a large contrast in refractive index when reversibly switched between their stable amorphous and crystalline states. OPCMs have rapidly gained attention due to their…
The Pd, and Pt based ABO2 delafossites are a unique class of layered, triangular oxides with 2D electronic structure and a large conductivity that rivals the noble metals. Here, we report successful growth of the metallic delafossite PdCoO2…
We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films…
We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to…
Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena,…
We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray…
Type-II nodal line semimetal (NLS) is a new quantum state hosting one-dimensional closed loops formed by the crossing of two bands which have the same sign in their slopes along the radial direction of the loop. According to the theoretical…
Chalcogenide material-based integrated photonic devices have garnered widespread attention due to their unique wideband transparency. Despite their recognized CMOS compatibility, the fabrication of these devices relies predominantly on…
Van der Waals In$_2$Se$_3$ has garnered significant attention due to its unique properties and wide applications associated with its rich polymorphs and polymorphic phase transitions. Despite extensive studies, the vast complex polymorphic…
Layered indium selenide (InSe), a new two-dimensional (2D) material with a hexagonal structure and semiconducting characteristic, is gaining increasing attention owing to its intriguing electronic properties. Here, by using first-principles…
Monolayer FeSe grown on SrTiO$_3$ provides a new playground for high-Tc superconductivity. A recent study shows the importance of stripy instability for superconductivity enhancement in FeSe/SrTiO3. However, it is still under debate whether…
We present our study of (0001) oriented Mn$_3$Sn (c-Mn$_3$Sn) thin films synthesized directly on an MgO (111) substrate via molecular beam epitaxy. We identify a growth window where Mn$_3$Sn growth can be controlled through slight…
Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…
We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si)…
Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been…
Thermoelectric materials can be designed to support optical resonances across multiple spectral ranges to enable ultra-wide band photodetection. For instance, antimony telluride (Sb2Te3) chalcogenide exhibits interband plasmonic resonances…