Related papers: Terahertz emission and detection using Ge-on-Si ph…

An interdigitated photoconductive antenna (i-PCA) for terahertz (THz) emission with a novel metal-insulator-semiconductor interface is designed with the aim of developing compact and scalable THz devices. The photoconductive material is an…

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…

Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the…

Terahertz (THz) technology is promising in several applications such as imaging, spectroscopy and communications. Among several methods in the generation and detection of THz waves, a THz time domain system (TDS) that is developed using…

We demonstrate here an efficient THz source with low electrical power consumption. We have increased the maximum THz radiation power emitted from SI-GaAs based photoconductive emitters by two orders of magnitude. By irradiating the SI-GaAs…

Semiconductor detector fabrication technologies developed decades ago are widely employed today to produce gamma-ray detectors from large volume, single crystals of high purity Ge (HPGe). Most all of these detectors are used exclusively for…

Precise control and nanoscale confinement of terahertz (THz) fields are essential requirements for emerging applications in photonics, quantum technologies, wireless communications, and sensing. Here, we demonstrate a polaritonic cavity…

We construct a terahertz time-domain spectrometer (THz-TDS) system based on photoconductive antenna (PCA). A 800 nm Ti sapphire femtosecond laser with 80 MHz repetition rate provides the pump and probe laser pulse, which has a 45 fs pulse…

Coherent, continuous-wave, and electrically tunable chip-scale terahertz (THz) sources are critical for emerging applications in sensing, imaging, spectroscopy, communication, space and quantum technologies. Here, we demonstrate a robust…

Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology in SWIR or extended SWIR range, leveraging the excellent…

We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime…

This article exploits group-IV germanium (Ge) quantum dots (QDs) on Silicon-on-Insulator (SOI) grown by molecular beam epitaxy (MBE) in order to explore its optical behaviour in the Terahertz (THz) regime. In this work, Ge QDs, pumped by an…

We study the effect of a surface modification at the interface between metallic electrodes and semiconducting substrate in Semi-Insulating GaAs (SI-GaAs) based photoconductive emitters (PCE) on the emission of Tera-Hertz (THz) radiation. We…

We achieve high detectivity terahertz sensing using a silicon nitride nanomechanical resonator functionalized with a metasurface absorber. High performances are achieved by striking a fine balance between the frequency stability of the…

Developing low-power, high-sensitivity photodetectors for the terahertz (THz) band that operate at room temperature is an important challenge in optoelectronics. In this study, we introduce a photo-thermal-electric (PTE) effect detector…

Terahertz (THz) and sub-THz frequency emitter and detector technologies are receiving increasing attention, underpinned by emerging applications in ultra-fast THz physics, frequency-combs technology and pulsed laser development in this…

Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, etc. To date, scientists have used different…

Phase-change materials (PCMs), which are well-established in optical and random-access memories, are increasingly studied for emerging topics such as brain-inspired computing and active photonics. These applications take advantage of the…

High bandwidth and low dark current germanium (Ge) photodetectors are crucial in silicon photonic integrated circuits. The bandwidth of Ge photodetectors is restricted by carrier transit time and parasitic parameters. And thermal generation…

The emission properties of terahertz(THz) photoconductive antenna (PCA) have been numerically studied by three-dimensional finite-difference-time-domain method based on the full-wave model. The dependence of the THz radiation on various…