Related papers: Quantifying the Relationship Between Strain and Ba…
Experiments test the dependence of shearing stress on the first two gradients of shear strain. The tests were conducted by direct numerical simulation using the Discrete Element Method (DEM) on a large two-dimensional (2D) assembly of…
We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized…
The combination of field tunable bandgap, topological edge states, and valleys in the band structure, makes insulating bilayer graphene a unique localized system, where the scaling laws of dimensionless conductance g remain largely…
Quantum systems in confined geometries are host to novel physical phenomena. Examples include quantum Hall systems in semiconductors and Dirac electrons in graphene. Interest in such systems has also been intensified by the recent discovery…
Bilayer graphene (BLG) possesses a finite bandgap when a potential difference is introduced between the two graphene layers. The potential difference is known to be introduced by surface charge transfer. Thus, it is expected that a finite…
The recent experimental synthesis of 2D graphitic C3N5 has attracted lot of interests in its electronic and optical properties and its comparison with other graphitic C3N4 and C3N3. To this end, we performed DFT calculations using more…
Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…
We present a first-principles study of effects of small biaxial strain ($|\varepsilon|\le 5\%$) and perpendicular electric field (E-field) on the electronic and phonon properties of low-buckled silicene and germanene. With an increase of…
Experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}) is a piezoelectric semiconductor. Here, we systematically study the large biaxial (isotropic) strain effects (0.90 to 1.10) on…
Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain.…
Oxidation of two-dimensional (2D) layered materials has proven advantageous in creating oxide/2D material heterostructures, opening the door for a new paradigm of low-power electronic devices. Gallium (II) sulfide ($\beta$-GaS), a hexagonal…
The design of band-gap metamaterials, i.e., metamaterials with the capability to inhibit wave propagation of a specific frequency range, has numerous potential engineering applications, such as acoustic filters and vibration isolation…
The bowing of the energy of the three lowest band-to-band transitions in $\beta$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach.…
The delicate interfacial conditions and behaviors play critical roles in determining the valuable physical properties of two-dimensional materials and their heterostructures on substrates. However, directly probing these complex interface…
The stacked two layered materials with a lattice constant mismatch and/or with twist angle relative to each other can create a moir\'e pattern, modulating the electronic properties of the pristine materials. Here, we combine scanning…
In this Letter, we investigate the strain-induced band-gap modulation of both armchair and zigzag graphane nanoribbons based on the first-principles calculations. Within the elastic range, the band gap changes linearly with the uniaxial…
In graphene, long-wavelength deformations that result in elastic shear strain couple to the low-energy Dirac electrons as pseudogauge fields. Using a scalable tight-binding model, we consider analogs to magnetotransport in mesoscopic…
Gallium nitride (GaN) is a wide-bandgap semiconductor of significant interest for applications in solid-state lighting, power electronics, and radio-frequency amplifiers. An important limitation of this semiconductor is its low intrinsic…
Uniaxial pressure provides an efficient approach to control the competition between charge density waves (CDWs) and superconductivity in underdoped YBa$_{2}$Cu$_{3}$O$_{\rm{y}}$. It can enhance the correlation volume of ubiquitous…
Scanning precession electron diffraction (SPED) is a powerful technique for investigating strain. While extensive literature exists analysing strain under high convergence angle conditions there are few systematic studies describing work…