Related papers: Deterministic domain selection of antiferromagnets…
We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…
When a spin-polarized current flows through a ferromagnetic (FM) metal, angular momentum is transferred to the background magnetization via spin-transfer torques. In antiferromagnetic (AFM) materials, however, the corresponding problem is…
We theoretically study a ferrimagnetic domain-wall motion driven by a rotating magnetic field. We find that, depending on the magnitude and the frequency of the rotating field, the dynamics of a ferrimagnetic domain wall can be classified…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
Recent ESR data shows rotation of the antiferromagnetic (AF) easy axis in lightly doped layered cuprates upon lowering the temperature. We account for the ESR data and show that it has significant implications on spin and charge ordering…
Using an electric field instead of an electric current (or a magnetic field) to tailor the electronic properties of magnetic materials is promising for realizing ultralow energy-consuming memory devices because of the suppression of Joule…
A fundamental difference between antiferromagnets and ferromagnets is the lack of linear coupling to a uniform magnetic field due to the staggered order parameter. Such coupling is possible via the Dzyaloshinskii-Moriya (DM) interaction but…
Van der Waals (vdW) magnetic heterostructures offer a versatile platform for engineering interfacial spin interactions with atomic precision, enabling nontrivial spin textures and dynamic behaviors. In this work, we report robust asymmetric…
The ability to rapidly manipulate domain walls (DWs) in magnetic materials is key to developing novel high-speed spintronic memory and computing devices. Antiferromagnetic (AFM) materials present a particularly promising platform due to…
The novel electronic state of the canted antiferromagnetic (AFM) insulator, strontium iridate (Sr2IrO4) has been well described by the spin-orbit-entangled isospin Jeff = 1/2, but the role of isospin in transport phenomena remains poorly…
The pinning and depinning of antiferromagnetic (AFM) domain wall is certainly the core issue of AFM spintronics. In this work, we study theoretically the N\'eel-type domain wall pinning and depinning at a notch in an antiferromagnetic (AFM)…
The paper, not pretending for a complete and detailed review, is intended mainly for a wide community of physicists, not only specialists in this particular subject. The author gives a physical picture of the periodic emergence of…
Spin waves in antiferromagnets are linearly or circularly polarized. Depending on the polarization, traversing spin waves alter the staggered field in a qualitatively different way. We calculate the drift velocity of a moving domain wall as…
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially…
We theoretically investigate dynamics of antiferromagnetic domain walls driven by spin-orbit torques in antiferromagnet/heavy metal bilayers. We show that spin-orbit torques drive antiferromagnetic domain walls much faster than…
Electric-field switching of magnetic order is of significant physical interest and holds great potential for spintronic applications. However, it has rarely been reported in two-dimensional (2D) van der Waals (vdW) magnets due to the…
In this work, we study the rotating magnetic field driven domain wall (DW) motion in antiferromagnetic nanowires, using the micromagnetic simulations of the classical Heisenberg spin model. We show that in low frequency region, the rotating…
Magnetoelectric multiferroics promise direct cross-control between coexisting ferroelectric and ferromagnetic orders, which is of interest for applications in magnetism and spintronics. A particularly interesting type of cross-control is…
Antiferromagnets (AFMs) have great benefits for spintronic applications such as high frequencies (up to THz), high speeds (up to tens of km/s) of magnetic excitations, and field-free operation. Advanced devices will require high-speed…
The discovery of magnetism in two-dimensional (2D) van der Waals (vdW) materials has flourished a new endeavour of fundamental problems in magnetism as well as potential applications in computing, sensing and storage technologies. Of…