Related papers: Deterministic domain selection of antiferromagnets…
Magnetic properties of graphene with randomly distributed magnetic defects/vacancies are studied in terms of the Kondo Hamiltonian in the mean field approximation. It has been shown that graphene with defects undergoes a magnetic phase…
The domain state model for exchange bias has been further investigated by considering vector spins for the antiferromagnet instead of Ising spins used in the earlier studies. The qualitative results are similar to those with infinite…
We present the theory of the spin motive force in antiferromagnets. We consider a one-dimensional antiferromagnetic domain wall strongly coupled with conduction electrons via an exchange interaction. We carry out a unitary transformation…
Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which has been diligently sought after for a long time. The two-dimensional (2D) vdW multiferroics is a more exciting endeavour. To…
We theoretically investigate magnon heat transport in an antiferromagnetic (AFM) insulator containing a domain wall (DW) in the presence of a magnetic field applied along the easy axis. We show that the intrinsic spin of the DW couples to…
We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…
The behavior of antiferromagnetic domain wall (ADW) against the background of a periodic ferroelectric domain structure has been investigated. It has been shown that the structure and the energy of ADW change due to the interaction with a…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et…
Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have…
Antiferromagnets are robust to external electric and magnetic fields, and hence are seemingly uncontrollable. Recent studies, however, realized the electrical manipulations of antiferromagnets by virtue of the antiferromagnetic Edelstein…
Ultrafast manipulation of magnetic states is one of the necessities in modern data storage technology. Quantum antiferromagnets are promising candidates in this respect. The orientation of the order parameter, the sublattice magnetization,…
Antiferromagnets (AFMs) are widely believed to be superior than ferromagnets in spintronics because of their high stability due to the vanishingly small stray field. It is thus expected that the order parameter of AFM should always align…
We identify a mechanism to convert skyrmions and antiskyrmions into their antiferromagnetic (AFM) counterparts via interfacial engineering. The key idea is to combine properties of an antiferromagnet and a spin-orbit (SO) coupled metal.…
A surface antisymmetry group framework is developed to establish design rules for deterministic electrical switching of the N\'eel vector in a film of a collinear bipartite antiferromagnet. In centrosymmetric altermagnets, where…
We consider periodic domain structures which appear due to the magnetoelastic interaction if the antiferromagnetic crystal is attached to an elastic substrate. The peculiar behavior of such structures in an external magnetic field is…
We report the direct observation of switching of the N\'eel vector of antiferromagnetic (AFM) domains in response to electrical pulses in micron-scale Pt/$\alpha$-Fe$_2$O$_3$ Hall bars using photoemission electron microscopy. Current pulses…
The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state,…
Antiferromagnetic materials have great potential for spintronic applications at terahertz (THz) frequencies. However, in contrast to ferromagnets, experimental studies of antiferromagnets are often challenging due to a lack of…
Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe…
Magnetic nano-objects possess great potential for more efficient data processing, storage and neuromorphic type of applications. Using high perpendicular magnetic anisotropy synthetic antiferromagnets in the form of multilayer-based…