Related papers: Cross-hatch strain effects on SiGe quantum dots fo…
Inhomogeneous strain may develop in hybrid organic metal-halide perovskite thin films due to thermal expansion mismatch with a fabrication substrate, polycrystallinity or even light soaking. Measuring these spatially varying strains is…
Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process inhomogeneities indeed shape the real space wave functions,…
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
Regardless of various material design strategies, experimentally achieving substantial and controllable valley splitting in Si/SiGe quantum wells remains a central challenge for ensuring high gate uniformity. This difficulty arises from…
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate…
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with…
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically,…
We report an investigation of the structural and electronic properties of hybrid superconductor/ferromagnet (S/F) bilayers of composition Nb/Cu$_{60}$Ni$_{40}$ prepared by magnetron sputtering. X-ray and neutron reflectometry show that both…
Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum…
Vertically stacked two-dimensional (2D) graphene-based van der Waals (vdW) heterostructures have emerged as the technological materials for electronic and optoelectronic device applications. In this regard, for the first time, we…
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional…
Germanium quantum dots in strained $\text{Ge}/\text{Si}_{1-x}\text{Ge}_{x}$ heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretically and numerically address the effects of random alloy…
Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain…
Ge/Si(001) multilayer heterostructures containing arrays of low-temperature self-assembled Ge quantum dots and very thin Si$_x$Ge$_{1-x}$ layers of varying composition and complex geometry have been studied using Raman spectroscopy and…
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity.…
Elastic strain distributions in SiGe heterostructures with quantum dots have been simulated with the use of the finite element method. The effect of a non-uniform germanium distribution in the nanoislands on the spatial dependence and the…
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…