Related papers: Floquet-driven tunneling control in monolayer MoS$…
The quantum transport properties of graphene and monolayer $MoS_2$ superconductor heterostructures has been of considerable importance in the recent few years. Layered nature of molybdenum disulfide permits the superconducting correlation…
The inelastic scattering and conversion process between photons and phonons by laser-driven quantum dots is analyzed for a honeycomb array of optomechanical cells. Using Floquet theory for an effective two-level system, we solve the related…
We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in the channel. This potential depends on the drain and gate…
Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that…
We consider the differential conductance of a periodically driven system connected to infinite electrodes. We focus on the situation where the dissipation occurs predominantly in these electrodes. Using analytical arguments and a detailed…
The performance of electronic and spintronic devices based on two-dimensional semiconductors (2D SC) is largely dependent on the quality and resistance of the metal/SC electrical contacts, as well as preservation of the intrinsic properties…
Advanced operando transmission electron microscopy (TEM) techniques enable the observation of nanoscale phenomena in electrical devices during operation. They can be used to study the switching mechanisms in two-dimensional (2D)…
Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we…
Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2…
The dielectric environment surrounding semiconductors plays a crucial role in determining device performance, a role that becomes especially pronounced in atomically thin semiconductors where charge carriers are confined within a few atomic…
We investigate the strain effect along armchair and zigzag directions on the tunneling transport of Dirac fermions in graphene laser barrier through a time dependent potential along y-axis. Our system is composed of three regions and the…
Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…
An optical phonon limited velocity model has been employed to investigate high-field transport in a selection of layered 2D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency…
We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find…
We consider Mott insulators driven by periodic coherent laser radiation, using both single orbital and multi-orbital models, noting that the latter is of more interest in solid state systems. We derive general expressions for the resulting…
Floquet engineering offers a path to optically-controlled materials, but experimental implementations have frequently relied on femtosecond pulses to achieve the high peak fields required to maximise interactions and obtain a measurable…
Using the effective-mass approximation and Floquet theory, we study the electron transmission over a quantum well in semiconductor heterostructures with Dresselhaus spin-orbit coupling and an applied oscillation field. It is demonstrated by…
We study the twisted MoTe$_2$ homobilayer coupled to periodic driving of a circularly polarized light (CPL). Using Floquet theory in the high-frequency limit, we start from the Dirac model including both the valence and conduction bands of…
In this review article we discuss the recent progress in studying ballistic transport for charge carriers in graphene through highly inhomogenous magnetic field known as magnetic barrier in combination with gate voltage induced…
Modulation of electronic properties of materials by electric fields is central to the operation of modern semiconductor devices, providing access to complex electronic behaviors and greater freedom in tuning the energy bands of materials.…