Related papers: Photonic Interactions with Semiconducting Barrier …
Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium…
Silicon has been long known as a poor light emitter due to its indirect band gap and strong phonon-assisted decay of the excited states. Nevertheless, we have revealed efficient quasi-monochromatic photoluminescence at 368 nm from bulk…
Recent studies of secondary electron (SE) emission in scanning transmission electron microscopes suggest that material's properties such as electrical conductivity, connectivity, and work function can be probed with atomic scale resolution…
Coupling single photon emitters to surface plasmons provides a versatile ground for on chip quantum photonics. However, achieving good coupling efficiency requires precise alignment of both the position and dipole orientation of the emitter…
As one of the most important semiconductors, silicon (Si) has been used to fabricate electronic devices, waveguides, detectors, and solar cells etc. However, its indirect bandgap hinders the use of Si for making good emitters1. For…
It is shown experimentally that the photodetachment yield of surplus electrons created by plasma-induced charging of non-conductive surfaces of dielectric materials depends on the initial surface charge density and do not correlate with the…
We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used…
Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces…
The importance of a photon source that would be compatible with silicon circuitry is crucial for data communication networks. A photon source with energies ranging from UV to near infrared can be activated in Si as originationg from defects…
Surface charging is a phenomenon ubiquitously observable in in-situ transmission electron microscopy of non-conducting specimens as a result of electron beam/sample interactions or optical stimuli and often limits the achievable image…
The transition from quasi-uniform to filamentary modes in a repetitive nanosecond Surface Dielectric Barrier Discharge(SDBD) under atmospheric pressure was studied. Our focus encompassed both discharge morphology and electrical…
The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and…
While electric and magnetic dipolar resonances in SiC have been studied in the far-infrared, they have not been studied in the near infrared. Here we show for the first time that electromagnetic Mie-scattering moments within SiC…
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising…
Understanding the transport of photogenerated charge carriers in semiconductors is crucial for applications in photovoltaics, optoelectronics and photo-detectors. While recent experimental studies using scanning ultrafast electron…
The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…
We theoretically demonstrate the coupling between excitons in 2D semiconductors and surface plasmons in a thin metal film by means of a surface acoustic wave (SAW), proving that the generated exciton-plasmon polaritons (or plexcitons) are…
We report our demonstration of Rabi oscillations in Si-SiO2-Al photoconductive devices with nanosecond laser pulses of a few nJ at room temperature without external magnetic fields. Zeeman splitting of spin quantum states of dopants in…
Wide bandgap semiconductors are widely used in photonic technologies due to their advantageous features, such as large optical bandgap, low losses, and fast operational speeds. Silicon carbide is a prototypical wide bandgap semiconductor…
Recent progress in the development of high-power mid-IR laser sources and the exciting laser driven physical phenomena associated with the irradiation of solids via ultrashort laser pulses in that spectral region are aimed to potentially…