Related papers: Efficient magnetization switching driven by orbita…
The Hanle magnetoresistance is a telltale signature of spin precession in nonmagnetic conductors, in which strong spin-orbit coupling generates edge spin accumulation via the spin Hall effect. Here, we report the existence of a large Hanle…
Spin-orbit torque facilitates efficient magnetization switching via an in-plane current in perpendicularly magnetized heavy metal/ferromagnet heterostructures. The efficiency of spin-orbit-torque-induced switching is determined by the…
Metallic amorphous ferrimagnets of 3d transition metals (TM) and rare earths (RE) with 4f electrons exhibit rich magneto transport behavior due to the interplay between the 3d and 4f magnetic sublattices and their interaction with mobile…
Recent studies have attracted increasing interest in nonrelativistic odd-parity magnetism and its associated topology in collinear altermagnets. Here, based on symmetry analysis and an effective model, we demonstrate that Floquet…
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In…
The reversal of perpendicular magnetization (PM) by electric control is crucial for high-density integration of low-power magnetic random-access memory (MRAM). Although the spin-transfer torque (STT) and spin-orbit torque (SOT) technologies…
Spin-orbit torques (SOTs) from transition metal oxides (TMOs) in conjunction with magnetic materials have recently attracted tremendous attention for realizing high-efficient spintronic devices. SrRuO3 is a promising candidate among TMOs…
5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the…
We present a study of the magnetic dynamics associated with nanosecond scale magnetic switching driven by the spin Hall effect in 3-terminal nanoscale magnetic tunnel junctions (3T-MTJs) with in-plane magnetization. Utilizing fast pulse…
We investigate the orbit-to-charge conversion in YIG/Pt/nonmagnetic material (NM) trilayer heterostructures. With the additional Ru layer on the top of YIG/Pt stacks, the charge current signal increases nearly an order of magnitude in both…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve…
The emergence of the orbital degree of freedom in modern orbitronics offers a promising alternative to heavy metals for the efficient control of magnetization. In this context, identifying interfaces that exhibit orbital-momentum locking…
Since Edwin Halls groundbreaking discovery of the Hall effect in 1879, magnetism, spin, and quantization have been expanding the scope of Hall effects, continuously driving transformative progress in science and technology. Among them, the…
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…
The magnetic spin Hall effect (MSHE) is an anomalous charge-to-spin conversion phenomenon which occurs in ferromagnetic materials. In contrast to the conventional spin Hall effect (SHE), being a time-reversal even effect, the magnetic…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
The spin Hall (SH) effect, the conversion of the electric current to the spin current along the transverse direction, relies on the relativistic spin-orbit coupling (SOC). Here, we develop a microscopic theory on the mechanisms of the SH…
Type-x device attracts considerable interest in the field of spintronics due to its robust spin-orbit torque (SOT) induced magnetization switching, and easy deposition technique. However, universally applicable and straightforward detection…
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin…