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In-Memory Computing (IMC) introduces a new paradigm of computation that offers high efficiency in terms of latency and power consumption for AI accelerators. However, the non-idealities and defects of emerging technologies used in advanced…

Using Error Detection Code (EDC) and Error Correction Code (ECC) is a noteworthy way to increase cache memories robustness against soft errors. EDC enables detecting errors in cache memory while ECC is used to correct erroneous cache…

In-memory computing promises to overcome the von Neumann bottleneck in computer systems by performing computations directly within the memory. Previous research has suggested using Spin-Transfer Torque RAM (STT-RAM) for in-memory computing…

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-transfer torque magnetic random access memory (STT-MRAM) has attracted significant research attention due to several features such as high density, zero…

One of the most exciting applications of Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) is the in-memory implementation of deep neural networks, which could allow improving the energy efficiency of Artificial Intelligence by…

The emergence of resistive non-volatile memories opens the way to highly energy-efficient computation near- or in-memory. However, this type of computation is not compatible with conventional ECC, and has to deal with device unreliability.…

As the demand for efficient, low-power computing in embedded and edge devices grows, traditional computing methods are becoming less effective for handling complex tasks. Stochastic computing (SC) offers a promising alternative by…

A new device structure for spin transfer torque based magnetic random access memory is proposed for on-chip memory applications. Our device structure exploits spin Hall effect to create a differential memory cell that exhibits fast and…

Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be…

Modern Deep Learning (DL) workloads are increasingly deployed in safety-critical domains, such as automotive systems and hyperscale data centers, where transient hardware faults pose a serious threat to system reliability. These workloads…

To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…

Error correction codes (ECC) are crucial for ensuring reliable information transmission in communication systems. Choukroun & Wolf (2022b) recently introduced the Error Correction Code Transformer (ECCT), which has demonstrated promising…

In this paper we describe a new error-correcting code (ECC) inspired by the Naccache-Stern cryptosystem. While by far less efficient than Turbo codes, the proposed ECC happens to be more efficient than some established ECCs for certain sets…

Elliptic curve cryptography (ECC) is widely used in security applications such as public key cryptography (PKC) and zero-knowledge proofs (ZKP). ECC is composed of modular arithmetic, where modular multiplication takes most of the…

Thanks to its superior features of fast read/write speed and low power consumption, spin-torque transfer magnetic random access memory (STT-MRAM) has become a promising non-volatile memory (NVM) technology that is suitable for many…

Non-volatile memory, such as resistive RAM (RRAM), is an emerging energy-efficient storage, especially for low-power machine learning models on the edge. It is reported, however, that the bit error rate of RRAMs can be up to 3.3% in the…

Progress in artificial intelligence and machine learning over the past decade has been driven by the ability to train larger deep neural networks (DNNs), leading to a compute demand that far exceeds the growth in hardware performance…

Spin-Transfer Torque RAMs (STTRAMs) have been shown to offer much promise for implementing emerging cache architectures. This paper studies the viability of STTRAM caches for mobile workloads from the perspective of energy and latency.…

Chip Guard is a new approach to symbol-correcting error correction codes. It can be scaled to various data burst sizes and reliability levels. A specific version for DDR5 is described. It uses the usual DDR5 configuration of 8 data chips,…

LLM inference is increasingly memory bound, and HBM cost per GB dominates system cost. Current HBM stacks include short on-die ECC that tightens binning, raises price, and fixes reliability policy inside the device. This paper asks whether…