Related papers: A Dual-Gate Altermagnetic Tunnel Junction Based on…
Emerging altermagnets with zero net magnetic moment and moment-dependent spin splitting offer a promising avenue for antiferromagnetic spintronic devices, yet their integration into magnetic tunnel junctions has been hindered by reliance on…
Altermagnets exhibit nonrelativistic spin splitting without net magnetization, establishing a new platform for next-generation spintronic devices. Although altermagnetic tunnel junctions (AMTJs) represent the most promising realizations,…
Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs).…
Magnetic tunnel junction (MTJ) is the key component to enable information access and increasing number of MTJs is integrated to develop high-density spintronic devices. However, continuous miniaturization of the conventional MTJs is…
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional…
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM N\'eel vector is used as a state variable. Efficient electric control and detection of the N\'eel vector are critical for spintronic applications.…
The recent proposal of altermagnetism has drawn widespread attention to antiferromagnet (AFM) exhibiting spin splitting, extending beyond the realm of sign-alternating spin splitting in momentum space protected solely by rotational…
Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures…
Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…
Altermagnetism is an emerging series of unconventional magnetic materials characterized by time-reversal symmetry breaking and spin-split bands in the momentum space with zero net magnetization. Metallic altermagnets offer unique advantages…
We propose altermagnet-superconductor junctions as a way to achieve a thermoelectric response in metals free of external or stray magnetic fields. We combine qualitative analysis in a simplified model with a more rigorous approach based on…
Altermagnets are a novel class of materials that combine antiferromagnetic spin ordering with non-relativistic spin splitting (NRSS) in their band structure, making them promising candidates for spintronics applications without requiring…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…
The emergence of altermagnets has driven groundbreaking advances in spintronics. Notably, d-wave altermagnets support non-relativistic spin transport, efficient charge-to-spin conversion, and T-odd spin currents. In addition, their…
Altermagnets exhibit characteristics akin to antiferromagnets, with spin-split anisotropic bands in momentum space. RuO$_2$ has been considered as a prototype altermagnet; however, recent reports have questioned altermagnetic ground state…
We establish a unified, symmetry-driven framework that combines the alternating spin splitting of altermagnets with valley topology to realize and electrically interconvert helical and chiral topological phases within a single material…
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel…
Altermagnet-based heterojunctions have demonstrated magnetoresistive effects in experiments, however, a predictive theoretical model for non-ferromagnetic structures has remained elusive. In this work, we develop a tunneling-based…
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of…
Due to nonrelativistic altermagnetic spin splitting effect (ASSE), altermagnets can generate time-reversal-odd spin current and spin splitting torque (SST) with spin polarization parallel to the N\'eel vector. Hence the effective…