Related papers: Engineering a Correlated Narrow-Gap Semiconductor:…
We explore the impact of introducing IIIA-group element Ga in place of IIB-group element Zn in binary intermetallic GdZn on its magnetic and magnetocaloric properties, as well as explicate the modified electronic band structure of the…
For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this…
The crystal structure, electronic and magnetic properties of the new full-Heusler compounds Zr2MnZ (Z=Al, Ga, In), were studied within the Density Functional Theory (DFT) framework. The materials exhibit unique properties that connect the…
We have studied the high-frequency properties of the non-equilibrium electron gas in GaN samples subjected to electric and magnetic fields. Spectra of the complex tensor of the dynamical mobility have been calculated for THz frequency…
Substitution of isovalent non-magnetic defects, such as Zn, in CuO2 plane strongly modifies the magnetic properties of strongly electron correlated hole doped cuprate superconductors. The reason for enhanced uniform magnetic susceptibility,…
The effect of Zn substitution on the superconducting transition temperature, Tc, was investigated for the La2-xSrxCu1-yZnyO4 (Zn-LSCO) compounds over a wide range of hole concentration, p (= x), and Zn content (y) in the CuO2 plane. Zn…
Using both muon spin rotation and muon spin relaxation, the superconducting ground state of the Heusler superconductor {ZrNi$_2$Ga} has been studied. The temperature dependence of the magnetic penetration depth of {ZrNi$_2$Ga} is consistent…
Magnetic polarons can generate colossal magnetoresistance in magnetic semiconductors, yet their terahertz electrodynamics remain largely unexplored. Here we report magneto-terahertz spectroscopy of the Eu-based Zintl antiferromagnet…
Electron-doped Eu(Fe$_{0.93}$Rh$_{0.07}$)$_2$As$_2$ has been systematically studied by high pressure investigations of the magnetic and electrical transport properties, in order to unravel the complex interplay of superconductivity and…
The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements…
We report results of a magneto-optical investigation of the Zintl-phase compound EuIn$_2$P$_2$. The compound orders magnetically at $T_C$=24 K and exhibits concomitant large magnetoresistance effects. For $T\le$50 K and increasing magnetic…
Recently, we reported [M. Wagner et al., J. Mater. Res. 26, 1886 (2011)] transport measurements on the semiconducting intermetallic system RuIn3 and its substitution derivatives RuIn_{3-x}A_{x} (A = Sn, Zn). Higher values of the…
Several recent studies have shown that the anisotropy in the magnetic structure of \ECA\ plays a significant role in stabilizing the Weyl nodes. To investigate the relationship between magnetic anisotropy and Weyl physics, we present a…
We report magnetic and transport properties of single-crystalline EuZn$_{2}$P$_{2}$, which has trigonal CaAl$_2$Si$_2$-type crystal structure and orders antiferromagnetically at $\approx$23~K. Easy $ab$-plane magneto-crystalline anisotropy…
The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional…
The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition of Ga(PAs) host using the state-of-the-art density functional methods including the modified Becke-Johnson functional to…
The effect of Zn substitution in the CuO2 plane on the superconducting transition temperature, Tc, was studied for the La2-xSrxCu1-yZnyO4 and YBa2(Cu1-yZny)3O7-d compounds over a wide range of hole concentration, p, and Zn content (y). Zn…
We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of…
A thorough study of EuZn$_2$P$_2$ single crystals, which were grown from Sn flux, was performed using both bulk (heat capacity, ac susceptibility, dc magnetization, electrical resistivitivity, magnetoresistance) and microscopic (M\"ossbauer…
The rational combination of existing magnetic topological compounds presents a promising route for designing new topological materials. We report the synthesis and comprehensive characterization of the layered quaternary intergrowth…