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High-speed, non-volatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite significant progress in developing phase change and ferroelectric…

Mesoscale and Nanoscale Physics · Physics 2025-04-24 Jing Liang , Yuan Xie , Dongyang Yang , Shangyi Guo , Kenji Watanabe , Takashi Taniguchi , Jerry I. Dadap , David Jones , Ziliang Ye

We propose and analyze an electrostatic-optical nano-scale trap for cold diatomic polar molecules. The main ingredient of our proposal is an square-array of ferroelectric nano-rods {with alternating polarization}. We show that, in contrast…

Quantum Gases · Physics 2018-02-21 Omjyoti Dutta , Geza Giedke

Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for…

Materials Science · Physics 2014-06-16 B. Kundys , V. Iurchuk , C. Meny , H. Majjad , B. Doudin

The in-memory computing paradigm with emerging memory devices has been recently shown to be a promising way to accelerate deep learning. Resistive processing unit (RPU) has been proposed to enable the vector-vector outer product in a…

Machine Learning · Computer Science 2020-04-24 Varun Bhatt , Shalini Shrivastava , Tanmay Chavan , Udayan Ganguly

Electric polarization and metallicity are long believed not to coexist until the emergence of exceptionally rare material examples including the bulk polar metals and more recently two-dimensional (2D) van der Waals (vdW) materials such as…

Mesoscale and Nanoscale Physics · Physics 2025-10-13 Zhou Zhou , Xiyao Peng , Jianfeng Bi , Fei Xue , Jie Jiang , Huizhen Wu , Zhiwen Shi , Haoliang Qian , Toshikaze Kariyado , Sihan Zhao

Portable miniaturized energy storage micro-supercapacitor has engrossed significant attention due to its power source and energy storage capacity, replacing batteries in ultra-small electronic devices. Fabrication with porous and 2D…

Applied Physics · Physics 2019-07-18 Meenakshi Talukdar , Sushant Kumar Behera , Pritam Deb

At interfaces between conventional materials, band bending and alignment are classically controlled by differences in electrochemical potential. Applying this concept to oxides in which interfaces can be polar and cations may adopt a mixed…

Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including…

Applied Physics · Physics 2022-06-22 D. Kundys , A. Cascales , A. S. Makhort , H. Majjad , F. Chevrier , B. Doudin , A. Fedrizzi , B. Kundys

Online training of deep neural networks (DNN) can be significantly accelerated by performing in-situ vector matrix multiplication in a crossbar array of analog memories. However, training accuracies often suffer due to device non-idealities…

Materials Science · Physics 2023-02-24 Sayani Majumdar , Ioannis Zeimpekis

While containers efficiently implement the idea of operating-system-level application virtualization, they are often insufficient to increase the server utilization to a desirable level. The reason is that in practice many containerized…

Distributed, Parallel, and Cluster Computing · Computer Science 2019-06-26 Jan S. Rellermeyer , Maher Amer , Richard Smutzer , Karthick Rajamani

Despite a clear demonstration of bistability in spin-crossover (SCO) materials, the absence of long-range magnetic order and poor electrical conductivity limit their prospect in spintronic and nanoelectronic applications. Intending to…

Dedicated hardware implementations of spiking neural networks that combine the advantages of mixed-signal neuromorphic circuits with those of emerging memory technologies have the potential of enabling ultra-low power pervasive sensory…

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…

CMOS-compatible HfO2-based ferroelectric tunnel junction (FTJ) has attracted significant attention as a promising candidate for in-memory computing (IMC) due to its extremely low power consumption. However, conventional FTJs face inherent…

Mesoscale and Nanoscale Physics · Physics 2026-01-06 Shi-Xi Kong , Tuo-Hung Hou

Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and…

Materials Science · Physics 2025-10-29 J. Schultheiß , G. Picht , J. Wang , Y. A. Genenko , L. Q. Chen , J. E. Daniels , J. Koruza

Polarization in ferroelectric domains arises from atomic-scale structural variations that govern macroscopic functionalities. The interfaces between these domains known as domain walls host distinct physical responses, making their…

Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the…

In neuromorphic photonic systems, device operations are typically governed by analog signals, necessitating digital-to-analog converters (DAC) and analog-to-digital converters (ADC). However, data movement between memory and these…

Emerging Technologies · Computer Science 2026-01-13 Sean Lam , Ahmed Khaled , Simon Bilodeau , Bicky A. Marquez , Paul R. Prucnal , Lukas Chrostowski , Bhavin J. Shastri , Sudip Shekhar

Storing digital information, ensuring the accuracy, steady and uninterrupted access to the data are considered as fundamental challenges in enterprise-class organizations and companies. In recent years, new types of storage systems such as…

Other Computer Science · Computer Science 2014-05-12 Arash Batni , Farshad Safaei

The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing and high response speed. Nonetheless, the principle to…

Materials Science · Physics 2021-02-16 Yan Liang , Ning Mao , Ying Dai , Liangzhi Kou , Baibiao Huang , Yandong Ma
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