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The conventional computer architecture has been facing challenges answering the ever-increasing demands from emerging applications, such as AI, for energy-efficient computation and memory hardware systems. Computational Random Access Memory…
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…
Spin-orbit torque (SOT) enables ultra-fast, energy-efficient magnetization switching, making it a promising mechanism for introducing MRAMs for cache memory applications. However, current SOT-MRAM devices face write efficiency limitations,…
We demonstrate a technique of broadband spin torque ferromagnetic resonance (ST-FMR) with magnetic field modulation for measurements of spin wave properties in magnetic nanostructures. This technique gives great improvement in sensitivity…
We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the…
Rapid random telegraph noise (RTN) in magnetic tunnel junctions (MTJs) is an important figure of merit for probabilistic computing applications. However, the interactions between the macrospin and spin waves with finite wave numbers reduce…
Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an…
Combining spin-orbit (SOT) and spin-transfer torques (STT) provides a practical approach for field-free switching in spin-orbit torque magnetic random-access memory (SOT-MRAM), a prerequisite for industrial deployment, but can compromise…
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…
The use of analog resistance states for storing weights in neuromorphic systems is impeded by fabrication imprecision and device stochasticity that limit the precision of synapse weights. This challenge can be resolved by emulating analog…
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical…
Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection of magnetic…
Superparamagnetic tunnel junctions (SMTJs) are promising sources for the randomness required by some compact and energy-efficient computing schemes. Coupling SMTJs gives rise to collective behavior that could be useful for cognitive…
Perpendicular magnetic tunnel junctions (pMTJs) actuated by nanosecond pulses are emerging as promising devices for true random number generation (TRNG) due to their intrinsic stochastic behavior and high throughput. In this work, we study…
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…
We demonstrate single shot al optical switching (AOS) in rare earth free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin transfer torque magnetic random access memory (STT MRAM). By tuning the capping…
We investigate the stochastic dynamics of nanoscale perpendicular magnetic tunnel junctions (pMTJs) and the correlations that arise when they are electrically coupled. Individual junctions exhibit thermally activated spin-transfer torque…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…