Related papers: Electric-Field-Controlled Altermagnetic Transition…
Multiferroics exhibit significant potential for low-power spintronic devices due to magnetoelectric coupling. Here, we discuss an emerging class of altermagnetic multiferroics, a system demonstrating distinct advantages including zero net…
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an…
Altermagnets are a novel class of fully spin-compensated magnetic materials that nevertheless have spin-split electronic bands, offering novel perspectives for spintronics applications. Based on a rigorous analysis of altermagnetic…
Electrical manipulation of antiferromagnetic states, a cornerstone of antiferromagnetic spintronics, is a great challenge, requiring novel material platforms. Here we report the full control over antiferromagnetic states by voltage pulses…
We find the realization of large converse magnetoelectric (ME) effects at room temperature in a multiferroic hexaferrite Ba$_{0.52}$Sr$_{2.48}$Co$_{2}$Fe$_{24}$O$_{41}$ single crystal, in which rapid change of electric polarization in low…
We measure the temperature, magnetic-field, and current dependence for the switching of nanomagnets by a spin-polarized current. Depending on current bias, switching can occur between either two static magnetic states or a static state and…
Despite extensive researches on manganites owing to widespread use in modern electronics, this class of metal oxides does not cease to surprise with its unique properties and new phenomena. Here we have studied structural and magnetic…
Antiferromagnetic (AF) materials are attracting increasing interest of research in magnetic physics and spintronics. Here, we report controllable synthesis of room-temperature AF $\alpha$-MnTe nanocrystals (N\'eel temperature ~ 307 K) via…
While altermagnetic materials are characterized by a vanishing net magnetic moment, their symmetry in principle allows for the existence of an anomalous Hall effect (AHE). Here we introduce a model with altermagnetism in which the emergence…
The electric field effect on magnetism was examined in the multiferroic conical magnet Mn$_2$GeO$_4$, which shows a strong coupling between ferromagnetic and ferroelectric order parameters. The systematic evaluation of the electric…
Spin-driven multiferroics exhibit strong magnetoelectric coupling, with notable polarization changes under a magnetic field, but these effects are usually limited to high-Z magnetic insulators with low electronic polarization. In this work,…
Intrinsic magnetic topological insulators provide an ideal platform to achieve various exciting physical phenomena. However, this kind of materials and related research are still very rare. In this work, we reported the electronic and…
Nonvolatile spintronics-based devices that utilize electron spin both to store and transport information face a great challenge when scaled to nano dimensions due to loss of thermal stability and stray field induced disturbance in closely…
Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…
The search for novel magnetic quantum phases, phenomena and functional materials has been guided by relativistic magnetic-symmetry groups in coupled spin and real space from the dawn of the field in 1950s to the modern era of topological…
We incorporate single crystal Fe$_3$O$_4$ thin films into a gated device structure and demonstrate the ability to control the Verwey transition with static electric fields. The Verwey transition temperature ($T_V$) increases for both…
Detailed understanding of spin dynamics in magnetic nanomaterials is necessary for developing ultrafast, low-energy and high-density spintronic logic and memory. Here, we develop micromagnetic models and analytical solutions to elucidate…
Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect (QAHE), axion…
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…